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| Number | Title | Issue Date |
| 8183689 | Printed circuit board and flip chip package using the same with improved bump joint reliability A printed circuit board and a flip chip package using the same are designed to minimize thermal stress due to different thermal coefficients present in areas having metal lines and solder resist versus other areas on the printed circuit board. The printed circuit bo... | 05/22/2012 |
| 8181127 | Standardization of assist pattern inserted into outermost pattern for enhancing depth of focus margin A method for processing optical proximity correction is disclosed which eliminates a need for repeated implementation of experiments and result in a reducing the processing time as compared to trial and error. Furthermore, the method can realize an optimal insertion... | 05/15/2012 |
| 8178975 | Semiconductor package with pad parts electrically connected to bonding pads through re-distribution layers The semiconductor package includes: a semiconductor chip module having multiple adjacently arranged or integrally formed semiconductor chips each with a bonding pad group and a connection member electrically connecting each of the bonding pads included in the first ... | 05/15/2012 |
| 8178921 | Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the same A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the... | 05/15/2012 |
| 8148764 | Semiconductor device having a high aspect cylindrical capacitor and method for fabricating the same A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semico... | 04/03/2012 |
| 8148243 | Zero capacitor RAM with reliable drain voltage application and method for manufacturing the same The following discloses and describes a zero capacitor RAM as well as a method for manufacturing the same. The zero capacitor RAM includes an SOI substrate. This SOI substrate is composed of a stacked structure of a silicon substrate, an embedded insulation film and... | 04/03/2012 |
| 8144527 | Semiconductor memory device A semiconductor memory device includes: a data multiplexing unit configured to output one of a data training pattern and data transferred through a first global input/output line in response to a training control signal; and a latch unit configured to latch an outpu... | 03/27/2012 |
| 8143127 | Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outsid... | 03/27/2012 |
| 8127069 | Memory device including self-ID information Disclosed is a memory device including self-ID information. The memory device has a storage unit for storing information related to the memory device, such as a manufacturing factory, a manufacturing date, a wafer number, coordinates on a wafer and the like. Each ba... | 02/28/2012 |
| 8124481 | Semiconductor device for reducing interference between adjoining gates and method for manufacturing the same A semiconductor device includes a semiconductor substrate having an active region having a plurality of recessed channel areas extending across the active region and a plurality of junction areas also extending across the active region. Gates are formed in and over ... | 02/28/2012 |
| 8120397 | Delay locked loop apparatus A delay locked loop (DLL) apparatus includes a first delay unit converting a reference clock into a rising clock. A second delay unit converts the reference clock into a falling clock, and a replica delay unit replica-delays the rising clock. A first phase detector ... | 02/21/2012 |
| 8114733 | Semiconductor device for preventing the leaning of storage nodes and method for manufacturing the same A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are... | 02/14/2012 |
| 8114557 | Method for optical proximity correction Provided is a method for optical proximity correction for use in manufacturing highly resolved semiconductor chips. The method includes setting a target layout; setting a peculiar area; sorting the peculiar area from the target layout; generating a marking layer; re... | 02/14/2012 |
| 8111574 | Circuit and method for controlling self-refresh cycle The present invention relates to a circuit and a method for controlling a self-refresh cycle of a dynamic random access memory or DRAM. A cell voltage is directly detected so that a self-refresh cycle can be variably controlled. Detectors each detecting whether or n... | 02/07/2012 |
| 8106704 | Apparatus and method for preventing excessive increase in pumping voltage when generating pumping voltage A device for generating a pumping voltage and preventing an excessive increase in the pumping voltage includes a pumping voltage output unit that outputs a pumping voltage and adjusts the level of the pumping voltage in order to maintain a target voltage. The level ... | 01/31/2012 |
| 8097517 | Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS The present invention relates to a semiconductor device which is capable of simultaneously improving a short channel effect of a PMOS and the current of an NMOS and a method for manufacturing the same. The semiconductor device includes first and second gates formed ... | 01/17/2012 |
| 8084839 | Circuit board having conductive shield member and semiconductor package using the same A circuit board having a board body includes a via structure. The via structure includes a conductive connector passing through the board body and a conductive shield member surrounding at least a portion of the conductive connector. The shield member prevents disto... | 12/27/2011 |
| 8073093 | Phase synchronous device and method for generating phase synchronous signal Disclosed are a phase synchronous device for improving jitter of an output signal and a method for generating a phase synchronous signal. The phase synchronous device includes a phase detector detecting a phase difference between first and second signals to output a... | 12/06/2011 |
| 8072046 | Through-electrode, circuit board having a through-electrode, semiconductor package having a through-electrode, and stacked semiconductor package having the semiconductor chip or package having a through-electrode A stacked semiconductor package includes a first semiconductor package having a first semiconductor chip having a first pad and a through-hole passing through a the portion corresponding to the pad; a second semiconductor package disposed over the first semiconducto... | 12/06/2011 |
| 8067839 | Stacked semiconductor package and method for manufacturing the same Disclosed are a stacked semiconductor package and a method for manufacturing the same. The method for manufacturing a stacked semiconductor package includes preparing a substrate formed with a seed metal layer; laminating semiconductor chips having via holes aligned... | 11/29/2011 |
| 8058141 | Recessed gate electrode MOS transistor and method for fabricating the same Disclosed are a transistor and a method for fabricating the same capable of increasing a threshold voltage and a driving current of the transistor. The method includes the steps of forming a first etch mask on a silicon substrate, forming a trench by etching the exp... | 11/15/2011 |
| 8053817 | Vertical transistor and method for forming the same A vertical transistor and a method for forming the same. The vertical transistor includes a semiconductor substrate having pillar type active patterns formed on a surface thereof; first junction regions formed in the surface of the semiconductor substrate on both si... | 11/08/2011 |
| 8053346 | Semiconductor device and method of forming gate and metal line thereof with dummy pattern and auxiliary pattern A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. T... | 11/08/2011 |
| 8051344 | Semiconductor memory testing device and method of testing semiconductor using the same The semiconductor memory testing device includes a test signal decoder decoding burn-in test mode signals which generates a first test signal for use in controlling entire main wordlines and which generates a second test signal for use in controlling sub wordlines. ... | 11/01/2011 |
| 8050003 | Electrostatic discharge protection circuit having a reduced size and lower operating voltage The present invention discloses an electrostatic discharge protection circuit. The electrostatic discharge protection circuit of the present invention includes a transfer unit that transfers electrostaticity from at least one of a plurality of input/output pads to a... | 11/01/2011 |
| 8049198 | Phase change memory device to prevent thermal cross-talk and method for manufacturing the same A phase change memory device for preventing thermal cross-talk includes lower electrodes respectively formed in a plurality of phase change cell regions of a semiconductor substrate. A first insulation layer is formed on the semiconductor substrate including the low... | 11/01/2011 |
| 8044516 | Semiconductor package with a reduced volume and thickness and capable of high speed operation and method for fabricating the same A semiconductor package includes a semiconductor chip provided with a bonding pad disposed over a surface thereof; a through electrode passing from the surface to a second surface opposing the first surface and connected electrically with the bonding pad; and a redi... | 10/25/2011 |
| 8044301 | Printed circuit board provided with heat circulating medium and method for manufacturing the same A printed circuit board includes a lower plate provided with an internal circuit wiring and having a recessed part at a surface thereof and a plurality of projection patterns at a lower surface of the recessed part; an upper plate having the same structure of the lo... | 10/25/2011 |
| 8043962 | Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the da... | 10/25/2011 |
| 8039965 | Semiconductor device with reduced layout area having shared metal line between pads A semiconductor device with a reduced layout area includes pads disposed between a first voltage line and a second voltage line; first and second driver units adjacently disposed at an upper portion or a lower portion of the respective pads; and a metal line dispose... | 10/18/2011 |
| 8039907 | Semiconductor device and method for fabricating the same A transistor, comprising a first gate structure formed on a substrate, and having a stacked structure of a first gate electrode and a first gate hard mask, a first gate spacer formed on sidewalls of the first gate structure, a second gate structure having a stacked ... | 10/18/2011 |
| 8036049 | Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits A semiconductor memory device includes an input/output line of a data transfer path and its surrounding circuits, comprising a controller which generates a control signal corresponding to command and address input in read and write operation; and a repeater which se... | 10/11/2011 |
| 8027210 | Data input apparatus with improved setup/hold window In the data input apparatus, a data delay unit outputs data input from outside the data input apparatice. The data delay unit varies the degree of delay in response to a test mode signal. A data alignment signal generating unit receives a first signal synchronized w... | 09/27/2011 |
| 8026125 | Phase change RAM device and method for fabricating the same Disclosed are a phase change RAM device and a method for fabricating a phase change RAM device, which can efficiently lower intensity of current required for changing a phase of a phase change layer. The method includes the steps of providing a semiconductor substra... | 09/27/2011 |
| 8023347 | Anti-fuse repair control circuit and semiconductor device including DRAM having the same In an anti-fuse repair control circuit, a semiconductor memory device is integrated into a multi-chip package to perform an anti-fuse repair. An anti-fuse repair control circuit includes a data mask signal input circuit, a cell address enable unit a repair enable un... | 09/20/2011 |
| 8018257 | Clock divider and clock dividing method for a DLL circuit A clock divider for a DLL circuit reduces power consumption by reducing the number of times of performing phase comparison in the DLL circuit when a synchronous memory device is in a power-down mode. The clock divider includes M dividers and a power-down controller ... | 09/13/2011 |
| 8014187 | Method for driving phase change memory device A method is disclosed for driving a phase change memory device including a phase change resistor. The method includes applying a trigger voltage to the phase change resistor for a first write time to preheat the phase change resistor, applying a first write voltage ... | 09/06/2011 |
| 8013319 | Phase change memory device having a bent heater and method for manufacturing the same A phase change memory device includes heaters which are formed in their respective memory cells and vertically positioned stack patterns having phase change layers and top electrodes which are formed to come into contact with the heaters. The heaters have horizontal... | 09/06/2011 |
| 8008774 | Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a d... | 08/30/2011 |
| 8000160 | Semiconductor device and cell plate voltage generating apparatus thereof A semiconductor device includes a monitor voltage transfer unit and a voltage generating unit. The monitor voltage transfer unit selects one of a plurality of internal voltages including a cell plate voltage in accordance with a test mode to output it to a voltage m... | 08/16/2011 |