...that the first rickshaw was invented in 1869 by an American Baptist minister, the Rev. E. Jonathan Scobie, to transport his invalid wife around the streets of Yokohama?
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| Number | Title | Issue Date |
| 8159437 | Liquid crystal display device with influences of offset voltages reduced A semiconductor integrated circuit includes a first register which latches display data, a second register which latches the display data of the first register in accordance with a first clock, a gray scale voltage generator which outputs a plurality of gray scale v... | 04/17/2012 |
| 8139332 | Level conversion circuit and semiconductor integrated circuit device employing the level conversion circuit In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the ... | 03/20/2012 |
| 8129707 | Semiconductor integrated circuit device With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer o... | 03/06/2012 |
| 8119495 | Method of manufacturing a semiconductor device having an active region and dummy patterns There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be place... | 02/21/2012 |
| 8094104 | Semiconductor integrated circuit, liquid crystal drive device, and liquid crystal display system A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification sta... | 01/10/2012 |
| 8076202 | Method of fabricating semiconductor device In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a... | 12/13/2011 |
| 8051331 | Memory card and its initial setting method In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12... | 11/01/2011 |
| 8050085 | Semiconductor processing device and IC card A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length ... | 11/01/2011 |
| 8044488 | Semiconductor device having particular impurity density characteristics The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor... | 10/25/2011 |
| 8042021 | Memory card and memory controller A memory card has a plurality of non-volatile memories and a main controller for controlling the operation of the non-volatile memories. The main controller performs an access control to the non-volatile memories in response to an external access instruction, and an... | 10/18/2011 |
| 8018006 | Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is formed with a base formed along a surface of the semiconductor layer, a... | 09/13/2011 |
| 8017986 | Semiconductor device A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which ... | 09/13/2011 |
| 7996821 | Data processor A data processor having a debugging aid function capable of monitoring a plurality of kinds of internal buses from the outside and identifying each of the buses monitored is provided. A central processing unit (CPU), a debugging aid module, and other circuit modules... | 08/09/2011 |
| 7990355 | Liquid crystal display device with influences of offset voltages reduced A semiconductor integrated circuit includes a first register, a second register, a gray scale voltage generator which outputs a plurality of gray scale voltages, a decoder which selects a gray scale voltage, and an amplifier including a first transistor, a second tr... | 08/02/2011 |
| 7982314 | Semiconductor integrated circuit device Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces ... | 07/19/2011 |
| 7972920 | Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor laye... | 07/05/2011 |
| 7965563 | Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of... | 06/21/2011 |
| 7964509 | Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual... | 06/21/2011 |
| 7964484 | Semiconductor integrated circuit device with reduced leakage current The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage cur... | 06/21/2011 |
| 7954039 | Memory card and memory controller A memory card has a plurality of non-volatile memories and a main controller for controlling the operation of the non-volatile memories. The main controller performs an access control to the non-volatile memories in response to an external access instruction, and an... | 05/31/2011 |
| 7948086 | Semiconductor device and a method of manufacturing the same and designing the same There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be place... | 05/24/2011 |
| 7830347 | Liquid crystal display device with influences of offset voltages reduced A liquid crystal display device includes drain signal lines, gate signal lines, thin film transistors, and a drain driver. The drain driver includes an amplifier circuit having a switching circuit which switches between a first state and a second state, the first st... | 11/09/2010 |
| 7823793 | IC card and an adapter for the same An IC card and card adapters are designed so that the IC card of a specific standard (e.g., MMC standard) is compatible with IC cards and terminals of other standards (e.g., MS card standard and USB terminal standard). In the IC card (MMC), a controller IC, which is... | 11/02/2010 |
| 7813156 | Semiconductor device The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sens... | 10/12/2010 |
| 7808828 | Non volatile memory An electrically programmable and erasable non-volatile semiconductor memory such as a flash memory is designed into a configuration in which, when a cutoff of the power supply occurs in the course of a write or erase operation carried out on a memory cell employed i... | 10/05/2010 |
| 7808107 | Semiconductor integrated circuit device Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces ... | 10/05/2010 |
| 7759804 | Semiconductor device and a method of manufacturing the same A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respecti... | 07/20/2010 |
| 7710764 | Semiconductor memory cells with shared p-type well A semiconductor integrated circuit with memory redundancy circuit to address the problems of increased area, power consumption and access time which is caused by using an ECC circuit for error correction. The circuit includes: a plurality of memory mats; a local bus... | 05/04/2010 |
| 7705462 | Semiconductor device and a method of manufacturing the same A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first ins... | 04/27/2010 |
| 7702704 | Random number generating method and semiconductor integrated circuit device A random number generating method for an electronic device including a plurality of unit circuits each first and second logic circuits, each logic circuit having a same shape and being formed through a same fabrication process, and an amplifier circuit for forming a... | 04/20/2010 |
| 7700992 | Semiconductor device A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which ... | 04/20/2010 |
| 7696582 | Semiconductor device A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the sem... | 04/13/2010 |
| 7694194 | Semiconductor device A highly reliable semiconductor device includes, for example, a memory circuit MEM such as a multiport RAM and a BIST circuit (BIST[A] and BIST[B]) for carrying out a test for each of the ports PO[A] and PO[B] of the MEM, as well as pointers PNT0[A] to PNT... | 04/06/2010 |
| 7692943 | Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells A semiconductor device includes a plurality of memory cells, and an error-correction circuit. Its write operation is performed by a late-write method, and ECC processing is executed in parallel with writing to shorten a cycle time. Moreover, when a memory cell is po... | 04/06/2010 |
| 7687914 | Semiconductor device and a method of manufacturing the same and designing the same There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be place... | 03/30/2010 |
| 7678706 | Method of manufacturing a semiconductor device The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main... | 03/16/2010 |
| 7672173 | Non-volatile semiconductor memory device and semiconductor memory device For each memory block, a predecoder for predecoding an applied address signal, an address latch circuit for latching the output signal of the predecoder, and a decode circuit for decoding an output signal of the address latch circuit and performing a memory cell sel... | 03/02/2010 |
| 7665049 | Method for identifying semiconductor integrated circuit device, method for manufacturing semiconductor integrated circuit device, semiconductor integrated circuit device and semiconductor chip In the manufacturing process of a semiconductor integrated circuit device, a plurality of identification elements having the same arrangement are formed and the relation of magnitude in a physical amount corresponding to variations in the process of the plurality of... | 02/16/2010 |
| 7643089 | Decoder device and receiver using the same A decoder apparatus which includes a de-multiplexer, which is configured to divide motion picture data from a transport stream, a video decoder, which is configured to decode the divided motion picture data, and a first re-formatter on-screen unit, which is configur... | 01/05/2010 |
| 7620838 | Semiconductor integrated circuit and image processing system using the same A circuit system is provided capable of improving the throughput thereof by eliminating the operational constraint that if the operating frequency of a content addressable memory is lower than the operating frequency of a system LSI, two system clocks should be prov... | 11/17/2009 |