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Assignee: Hitachi Kokusai Electric Inc.


Location: JP
No. of patents: 1

NumberTitleIssue Date
6965092Ultra fast rapid thermal processing chamber and method of use
An apparatus and method and processing a semiconductor substrate that controls heating of the substrate to thereby control the depth of the junctions formed by impurities implanted in the semiconductor substrate by heating a device side of the semiconductor substrat...
11/15/2005
 
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