Assignee: Furukawa Electric Co., Ltd.

Location: Tokyo, JP
No. of patents: 116

Number	Title	Issue Date
8183597	GaN semiconductor device having a high withstand voltage A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nit...	05/22/2012
8181487	Optical fiber preform manufacturing method An optical fiber preform manufacturing method includes: supporting a drilling jig in a radial direction of a preform that is cylinder-shaped; moving the drilling jig in a longitudinal direction of the preform; and forming a plurality of slits each extending in the l...	05/22/2012
8178898	GaN-based semiconductor element A GaN-based semiconductor element includes a substrate, a buffer layer formed on the substrate, including an electrically conductive portion, an epitaxial layer formed on the buffer layer, and a metal structure in ohmic contact with the electrically conductive porti...	05/15/2012
8178364	Testing method of surface-emitting laser device and testing device thereof A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being el...	05/15/2012
8149891	Semiconductor device and optical module A semiconductor laser element 10 according to the present invention comprises a waveguide 12 of a high mesa type. And then such the waveguide 12 comprises an oblique end face 17 as an emitting facet that is different from a cleaved end fa...	04/03/2012
8147904	Metal clad laminate and method for manufacturing metal clad laminate A method for manufacturing a metal clad laminate having a film and a metal layer formed of a foundation layer and an upper layer includes the steps of forming the foundation layer on at least a part of a surface of the film by plating to obtain a first laminate; for...	04/03/2012
8144742	Surface emitting laser device To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the s...	03/27/2012
8141391	Glass preform manufacturing method A glass preform manufacturing method includes: generating glass fine particles by hydrolyzing a source gas in an oxyhydrogen flame; depositing the generated glass fine particles to form a torous glass preform; immersing the porous glass preform in an additive soluti...	03/27/2012
8134181	Semiconductor device A semiconductor device includes a substrate; a buffer layer; and a compound semiconductor layer laminated on the substrate with the buffer layer in between. The buffer layer has a dislocation density in a plane in parallel to an in-plane direction thereof, so that a...	03/13/2012
8126336	Optical transmission system and optical repeater An optical repeater connected to an optical transmission line between an optical network unit having an ONU function on the side of a subscriber and an optical line termination (OLT) on the side of a center includes first electrical/optical conversion means connecte...	02/28/2012
D652438	Optical fiber fusion splicer	01/17/2012
8093626	Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitri...	01/10/2012
8072002	Field effect transistor A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-x	12/06/2011
8041173	Multi-core optical fiber having alignment markers A multi-core optical fiber includes: a plurality of core portions; and a cladding portion positioned around the plurality of core portions and including a marker for identifying a position of a specific one of the plurality of core portions. ...	10/18/2011
8040928	Semiconductor laser, method for generating laser beam and method for reducing a spectral line-width of laser beam A semiconductor laser is provided capable of generating very narrow laser beams and having stable characteristics, a method for generating the laser beams and a method for reducing a spectral line-width of the laser beams. The semiconductor laser includes a semicond...	10/18/2011
8036505	Athermal AWG module An athermal AWG module 10 comprises: an AWG 11 having waveguides partially divided to separate a chip, separated chips being connected by a compensation plate 33 to achieve temperature-independence; an athermal AWG chip 12 having a substr...	10/11/2011
8035128	Semiconductor device and method for fabricating the same There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and ...	10/11/2011
8031012	Optoelectronic oscillator and pulse generator The objects of the present invention are to shorten a cavity length of an optoelectronic oscillator and to integrate on a semiconductor or SiO2-substrate. An optoelectronic oscillator 10 have an optoelectronic loop comprising a semiconductor laser 11, ...	10/04/2011
8030224	Manufacturing method of semiconductor device, semiconductor device, communication apparatus, and semiconductor laser A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a sur...	10/04/2011
8008578	Multilayer insulated electric wire A multilayer insulated electric wire includes a conductor and three or more insulating layers covering the conductor. In the multilayer insulated electric wire, the outermost layer (A) of the insulating layers includes a coating layer formed of a resin composition o...	08/30/2011
8002595	Electrical contact material, method of manufacturing the same, and electrical contact An electrical contact material includes a surface layer formed of a noble metal or an alloy containing the noble metal as a major constituent. An organic film having heat resistance is formed on a surface of the surface layer, and the organic film is formed of an or...	08/23/2011
7998848	Method of producing field effect transistor The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing th...	08/16/2011
7980622	Power supply apparatus for a sliding door A power supply apparatus for a sliding door includes a body-side fixture mounted on an automobile body, a door-side fixture mounted on the sliding door, and a flat cable gripped in the body-side fixture and the door-side fixture for supplying power to the sliding do...	07/19/2011
7974327	Surface emitting laser element array A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk betwe...	07/05/2011
7947133	Copper alloy strip material for electrical/electronic equipment and process for producing the same A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C c...	05/24/2011
7943496	Method of manufacturing GaN-based transistors A method of manufacturing a GaN-based field effect transistor is provided by which a lower resistance and a higher breakdown voltage are obtained and which is less affected by a current collapse. A method of manufacturing the GaN-based field effect transistor(s) can...	05/17/2011
7909634	Electrical connection structure of a connecting terminal An objective is to provide a connection structure of a connecting terminal by which it becomes able to perform a connection of any of pieces for piercing as assuredly without being bended that is piercing through an electrically conductive flat square body, and to p...	03/22/2011
7907653	Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate 10 is comprised of: a semicondu...	03/15/2011
7903919	Holey fiber A holey fiber has: a core region at a center of the holey fiber; a cladding region around the core region; a plurality of holes included in the cladding region, formed in layers around the core region, arranged to form a triangular lattice having a lattice constant ...	03/08/2011
7893880	Antenna installed on radar Disclosed is an antenna for a radar device which is available for angle measuring in a wide angle for both of the right and the left directions from a travelling direction of a vehicle. SOLUTION: An antenna for radar device 100 comprises an antenna uni...	02/22/2011
7885312	Surface emitting semiconductor laser element A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the cen...	02/08/2011
7884996	Delay-line demodulator A delay-line demodulator for demodulating a differential quadrature phase shift keying (DQPSK) signal is provided. The demodulator includes two Mach-Zehnder interferometers individually comprising two waveguides having different lengths therebetween and through whic...	02/08/2011
7881353	Surface emitting laser element array Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the...	02/01/2011
7855155	Process for producing semiconductor device using optical absorption layer An optical absorption layer comprised of a substance having a band gap energy smaller than that of GaN is formed on an implanted region formed in a pGaN layer as a ground layer. There is performed an annealing step from an upper surface of a substrate with predeterm...	12/21/2010
7812371	GaN based semiconductor element The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated stru...	10/12/2010
7796846	Optical integrated device and method of manufacturing the same An optical integrated device comprises a substrate and a waveguide formed on a surface of the substrate. The waveguide includes a lower clad layer, a core layer formed on the lower clad layer and having a refractive index greater than that of the lower clad layer, a...	09/14/2010
7771841	Ultrathin copper foil with carrier and printed circuit board using same An ultrathin copper foil with a carrier not causing blistering at a release layer interface, having a low carrier peeling force, friendly to the environment, and enabling easy peeling of a carrier foil and an ultrathin copper foil even under a high temperature envir...	08/10/2010
7724364	Small object identifying device and its identifying method A small object identifying device and its identifying method according to which a large number of small objects can be identified. In one embodiment, the device includes a dispersion region section which disperses a large quantity of several kinds of small objects w...	05/25/2010
7649678	Delay-line demodulator A delay-line demodulator for demodulating a differential quadrature phase shift keying (DQPSK) signal is provided. The demodulator includes two Mach-Zehnder interferometers individually comprising two waveguides having different lengths therebetween and through whic...	01/19/2010
7648601	High-strength, high-conductivity copper alloy wire excellent in resistance to stress relaxation A high-strength, high conductivity copper alloy wire that is excellent in resistance to stress relaxation, which contains 1.0 to 4.5% by mass of Ni, 0.2 to 1.1% by mass of Si, 0.05 to 1.5% by mass of Sn, and less than 0.005% (including zero) by mass of S, with the b...	01/19/2010

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Assignee: Furukawa Electric Co., Ltd.