Assignee: Fujitsu Quantum Devices Limited

Location: Yamanashi, JP
No. of patents: 110

Number	Title	Issue Date
8133775	Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ...	03/13/2012
7919415	Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In....	04/05/2011
7888193	Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ...	02/15/2011
7709310	Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ...	05/04/2010
7626443	Switching circuit, switching module and method of controlling the switching circuit A switching circuit includes switching transistors connected to one of an input terminal and an output terminal of the switching circuit, and a control bias supply circuit that supplies a control bias for cutting off all the switching transistors to the switching tr...	12/01/2009
7570919	Transmitter, receiver, and radio communications system and method Transmitter and receiver for wireless communications with improved accuracy and stability in radio frequency control. A transmitter mixes an information-carrying signal (first signal) and a non-modulated wave signal (second signal) with a carrier signal, thereby pro...	08/04/2009
7368750	Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat...	05/06/2008
7352086	Switching circuit, switching module and method of controlling the switching circuit A switching circuit includes switching transistors connected to one of an input terminal and an output terminal of the switching circuit, and a control bias supply circuit that supplies a control bias for cutting off all the switching transistors to the switching tr...	04/01/2008
7335542	Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ...	02/26/2008
7303933	Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In....	12/04/2007
7267893	Optical multilayer film and optical semiconductor device including the same An optical multilayer film includes: a first layer; a second layer that contains titanium oxynitride as a main component; and a third layer that contains magnesium fluoride as a main component; the first layer that has a different refractive index from that of the s...	09/11/2007
7253513	High-frequency switch device and electronic device using the same A switch device includes a semiconductor chip, and at least two switches formed on the semiconductor chip. Ground parts of the at least two switches are arranged between said at least two switches. ...	08/07/2007
7223645	Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ...	05/29/2007
7157756	Field effect transistor A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermi...	01/02/2007
7122393	Optical semiconductor device and method of fabricating the same An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than t...	10/17/2006
7105798	Semiconductor light-receiving device with multiple potentials applied to layers of multiple conductivities A semiconductor light-receiving device includes: a substrate that has a first surface and a second surface facing each other; a first semiconductor layer that is formed on the first surface of the substrate and includes at least one semiconductor layer of a first co...	09/12/2006
7091527	Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to ...	08/15/2006
7081639	Semiconductor photodetection device and fabrication process thereof A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile ...	07/25/2006
7067743	Transmission line and device including the same A transmission line includes a transmission line substrate, a signal line, and a first ground pattern that is provided on the transmission line substrate and is located between the transmission line substrate and a metal wire used to connect the signal line to a com...	06/27/2006
7049179	Semiconductor device and manufacturing method thereof A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side s...	05/23/2006
7015109	Interdigital capacitor and method for adjusting the same An interdigital capacitor includes a semiconductor substrate, and a pair of comb-like electrodes formed on the semiconductor substrate. At least one of the pair of comb-like electrodes includes a cutting target portion. ...	03/21/2006
7012938	Laser device, controller and method for controlling the laser device A laser device includes a laser diode, and a controller that superimposes a low-frequency signal on a modulating signal applied to the laser diode. The low-frequency signal has an amplitude that correlates with an amplitude of the modulating signal. ...	03/14/2006
6998679	Semiconductor device and method of fabricating the same A semiconductor device includes a gate electrode on a semiconductor substrate, a source electrode and a drain electrode that are provided on the semiconductor substrate, the gate electrode being interposed between the source electrode and the drain electrode, an ins...	02/14/2006
6982441	Semiconductor device with a super lattice buffer A semiconductor device includes a compound semiconductor substrate having a resistivity less than 1.0×108 Ohm-cm at least at one surface thereof, a buffer layer formed on the compound semiconductor substrate and having a super lattice structure, and an a...	01/03/2006
6975031	Semiconductor device and chip carrier There are provided a carrier substrate, a temperature sensing resistor film formed directly on the carrier substrate, first and second conductive patterns formed on the carrier substrate and connected to both ends of the temperature sensing resistor film respectivel...	12/13/2005
6972638	Directional coupler and electronic device using the same A directional coupler includes a transmission line, and a coupling line, the transmission line being coupled with the coupling line. The transmission line is located at a height position different from that of the coupling line with respect to a reference plane. The...	12/06/2005
6955994	Method of manufacturing semiconductor device and method of manufacturing optical wave guide A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and ac...	10/18/2005
6949811	Device having interdigital capacitor A device includes a transistor, and two interdigital capacitors. The transistor is located on an imaginary extension line aligned with a common electrode of the two interdigital capacitors. ...	09/27/2005
6944252	Phase comparator circuit A data signal DATA is captured by flip-flops 10 and 11 alternately every half cycle time of a clock signal CLK, outputs of the flip-flops 10 and 11 are delayed by respective delay circuits 15 and 16 to generate delayed signa...	09/13/2005
6930334	High frequency semiconductor device A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground pote...	08/16/2005
6924918	Optical modulator and method of manufacturing the same An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. T...	08/02/2005
6924541	Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to ...	08/02/2005
6924162	Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In....	08/02/2005
6882667	Optical semiconductor device and method for controlling the same An optical semiconductor device includes an element in which a laser diode and an optical modulator are integrated, and a circuit that sets a common node of the laser diode and the optical modulator at a reference potential different from a ground potential and driv...	04/19/2005
6876683	Optical semiconductor device A package for hermetically sealing a semiconductor laser which outputs light having a wavelength of 1.1 μm or more is filled with a gas containing an oxidizing gas such as oxygen or ozone. The oxidizing gas in the package oxidizes hydrogen in the package to prevent...	04/05/2005
6853054	High frequency semiconductor device A high frequency semiconductor device including wiring layers which are formed above a semiconductor substrate and in which transmission lines are formed by combining with a ground plate having a potential fixed at the ground potential, at least one crossing portion...	02/08/2005
6831265	Photodetector having improved photoresponsitivity over a broad wavelength region A photodetector includes an optical absorption layer having a thickness d optimized with regard to a voltage applied across the optical absorption layer such that there occurs an increase of optical absorption coefficient at the wavelength of 1580 nm or longer. ...	12/14/2004
6825809	High-frequency semiconductor device A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch elec...	11/30/2004
6822984	Device for and method of testing semiconductor laser module In the semiconductor laser module testing device, a temperature control power source changes a temperature of a wavelength locker module, and a wavelength monitoring bias circuit detects an output of a wavelength monitor in the changed temperature range and computes...	11/23/2004
6809344	Optical semiconductor device and method of fabricating the same An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than t...	10/26/2004

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Assignee: Fujitsu Quantum Devices Limited