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Assignee: Fujitsu Quantum Devices Limited


Location: Nakakoma-gun, JP
No. of patents: 3

NumberTitleIssue Date
7144164Optical device and method of manufacturing the same
An optical device includes a rigid pipe provided to cover the outer peripheries of a fixing joint portion and an optical fiber. The tip portion of the rigid pipe has a gap for providing flexibility between the optical fiber and the tip portion. Therefore, the rigid ...
12/05/2006
6900482Semiconductor device having divided active regions with comb-teeth electrodes thereon
A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated ci...
05/31/2005
6274893Compound semiconductor device and method of manufacturing the same
The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1×1016 to 1×1017 atoms/cm3, or the bandgap of a Schottky layer is set...
08/14/2001
 
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