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| Number | Title | Issue Date |
| 7368387 | Polishing composition and polishing method A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic ac... | 05/06/2008 |
| 6852009 | Polishing composition and polishing method employing it A polishing composition which comprises the following components (a) to (d): (a) silicon dioxide, (b) at least one basic substance selected from the group consisting of an inorganic salt of an alkali metal, an ammo... | 02/08/2005 |
| 6838016 | Polishing composition and polishing method employing it A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium ... | 01/04/2005 |
| 6814766 | Polishing composition and polishing method employing it A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid,... | 11/09/2004 |
| 6811583 | Polishing composition for a substrate for a magnetic disk and polishing method employing it A polishing composition for a substrate for a magnetic disk, which comprises: (a) a polishing accelerator composed of at least one compound selected from the group consisting of malic acid, glycolic acid, succinic acid, citric acid... | 11/02/2004 |
| 6773476 | Polishing composition and polishing method employing it A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide,... | 08/10/2004 |
| 6679929 | Polishing composition and polishing method employing it A polishing composition comprising the following components (a) to (g): (a) at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) an aliphatic carboxylic acid, ... | 01/20/2004 |
| 6645051 | Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene alkyl ether an... | 11/11/2003 |
| 6641917 | Spray powder and method for its production A spray powder to be used for forming a coating, which comprises from 80 to 97 wt %, based on the total weight, of a cermet powder and from 3 to 20 wt %, based on the total weight, of a metal powder, wherein the metal powder comprises Cr and Ni in a total... | 11/04/2003 |
| 6626967 | Polishing composition and polishing method employing it A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a ... | 09/30/2003 |
| 6565619 | Polishing composition and polishing method employing it A polishing composition comprising: (a) colloidal silica having a positively charged surface, (b) colloidal silica having a negatively charged surface, (c) at least one acid selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, lactic... | 05/20/2003 |
| 6482534 | Spray powder, thermal spraying process using it, and sprayed coating A spray powder which has a particle size of from 6 to 63 μm and which comprises from 75 to 95 wt % of a ceramic phase made of a WC powder and at least one chromium carbide powder selected from the group consisting of Cr3 C2, Cr... | 11/19/2002 |
| 6478832 | Grinding stone, process for its production and grinding method employing it A grinding stone using a metal material as the main material of a bonding material, which comprises: (A) abrasive grains of at least one member selected from the group consisting of diamond, cubic boron nitride, silicon carbide and aluminum oxide, (B) a b... | 11/12/2002 |
| 6440186 | Polishing composition and polishing method employing it A polishing composition comprising: (a) an abrasives (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a... | 08/27/2002 |
| 6428721 | Polishing composition and polishing method employing it A polishing composition comprising the following components: (a) an abrasive, (b) -alanine, (c) hydrogen peroxide, and (d) water.... | 08/06/2002 |
| 6423125 | Polishing composition A polishing composition for magnetic disk substrates to be used for memory hard disks, which comprises: (a) water; (b) at least one phosphate. compound selected from the group consisting of a phosphate ester of ethoxylated alkylalcohol and a phosphate ester of... | 07/23/2002 |
| 6355075 | Polishing composition A polishing composition comprising an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH regulator and water and having a pH within a range of from 2 to 5, wherein the abrasive is colloidal silica or fumed silica, and its primary particle size ... | 03/12/2002 |
| 6315803 | Polishing composition and polishing process Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process where dishing can ... | 11/13/2001 |
| 6309434 | Polishing composition and method for producing a memory hard disks A polishing composition for a magnetic disk substrate to be used for a memory hard disk, which comprises: (a) colloidal silica as an abrasive in an amount within a range of from 0.1 to 35 wt % based on the total weight of the composition; (b) iron nitrate as a... | 10/30/2001 |
| 6280652 | Edge polishing composition An edge polishing composition for wafers, comprising water and silicon dioxide having an average particle size of from 70 to 2,500 nm.... | 08/28/2001 |
| 6248144 | Process for producing polishing composition A process for producing a polishing composition, which comprises preliminarily adjusting water to pH 2-4, adding from 40 to 60 wt % of fumed silica to the water under high shearing force, adding water to lower the viscosity to 2-10000 cps, stirring the mi... | 06/19/2001 |
| 6193790 | Polishing composition A polishing composition for memory hard disks, which comprises water and at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, and... | 02/27/2001 |
| 6190443 | Polishing composition A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese d... | 02/20/2001 |
| 6139763 | Polishing composition and polishing method employing it A polishing composition comprising the following components: (a) an abrasive, (b) an oxidizing agent capable of oxidizing tantalum, (c) a reducing agent capable of reducing tantalum oxide, and (d) water.... | 10/31/2000 |
| 6117220 | Polishing composition and rinsing composition A polishing composition for a memory hard disc, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polystyrenesulfonic acid, and its salts, (c) a compound selected from the group co... | 09/12/2000 |
| 6027669 | Polishing composition A polishing composition comprising fumed silica, a basic potassium compound and water, of which the specific electric conductivity is from 100 to 5,500 μS/cm.... | 02/22/2000 |
| 5997620 | Polishing composition A polishing composition for polishing a memory hard disk comprising water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide... | 12/07/1999 |
