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Assignee: Epitech Technology Corporation


Location: Tainan County, TW
No. of patents: 7

NumberTitleIssue Date
7271424Light-emitting diode with openings formed in a stacked structure
A light-emitting diode has a sub-mount, a first conductivity type substrate deposed on the sub-mount, a reflector layer deposed between the sub-mount and the first conductivity type substrate, a first conductivity type buffer layer deposed on the first conductivity ...
09/18/2007
7335519Method for manufacturing a light-emitting diode
A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a tr...
02/26/2008
7301272Lighting device and method for manufacturing the same
A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to f...
11/27/2007
7238972Photodetector
A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V co...
07/03/2007
7192794Fabrication method of transparent electrode on visible light-emitting diode
A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal ele...
03/20/2007
7115915Light-emitting diode
A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electro...
10/03/2006
 
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