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| Number | Title | Issue Date |
| 7560343 | Manufacturing method of non-volatile memory A manufacturing method of a non-volatile memory includes first providing a substrate for defining multiple pairs of active regions; forming a control gate in one of each pair of the active regions of the substrate; sequentially forming a gate oxide layer, a conducto... | 07/14/2009 |
| 7538396 | Semiconductor device and complementary metal-oxide-semiconductor field effect transistor A semiconductor device includes a substrate, an epitaxial layer, a sinker, an active device, a first buried layer, and a second buried layer. The substrate has a first type conductivity. The epitaxial layer has a second type conductivity, and is located on the subst... | 05/26/2009 |
| 7517759 | Method of fabricating metal oxide semiconductor device A method of fabricating an MOS device is described. A substrate doped a first type dopant is provided as a drain. A first type epitaxial layer is formed on the substrate and is patterned with a trench to form several islands. A gate dielectric layer is then formed o... | 04/14/2009 |
| 7514754 | Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer, a first sinker, a first buried layer, a second epitaxial layer, a second sinker and a second buried layer. The first and second epitaxial layers are disposed ... | 04/07/2009 |
| 7508028 | Non-volatile memory A non-volatile memory is provided, including a control gate, a floating gate, a gate oxide layer, a source region, a drain region, a first dielectric layer, a second dielectric layer, and an erase gate. The control gate is disposed in a substrate. The floating gate ... | 03/24/2009 |
| 7411271 | Complementary metal-oxide-semiconductor field effect transistor A complementary metal-oxide-semiconductor field effect transistor (CMOSFET) is provided. The CMOSFET includes a substrate of a first conductivity type, a first epitaxial layer, a well, a second epitaxial layer of a second conductivity type, a first sinker, a second ... | 08/12/2008 |
| 7391079 | Metal oxide semiconductor device A method of fabricating an MOS device is described. A substrate doped a first type dopant is provided as a drain. A first type epitaxial layer is formed on the substrate and is patterned with a trench to form several islands. A gate dielectric layer is than formed o... | 06/24/2008 |
| 7338852 | Method of forming a semiconductor device having a capacitor and a resistor A method of simultaneously forming at least: one capacitor two resistors and one metal-oxide semiconductor. A first doped polysilicon layer/patterned interpoly oxide film/second doped polysilicon layer is formed over an exposed oxide structure. The patterned interpo... | 03/04/2008 |
| 7294550 | Method of fabricating metal oxide semiconductor device A method of fabricating an MOS device is described. A substrate doped a first type dopant is provided as a drain. A first type epitaxial layer is formed on the substrate and is patterned with a trench to form several islands. A gate dielectric layer is than formed o... | 11/13/2007 |
| 7084033 | Method for fabricating a trench power MOSFET A method for fabricating a trench power MOSFET, comprising an epitaxial layer and a mask layer formed over a substrate, a trench formed in the epitaxial layer and the mask layer, a gate oxide layer formed on the trench, then the mask layer removed, a body well regio... | 08/01/2006 |
| 7060567 | Method for fabricating trench power MOSFET A method for fabricating trench power MOSFET is described. An epitaxial layer and a mask layer having a first opening are sequentially formed on a substrate. A pair of spacers is formed on the sidewalls of the first opening. A second opening exposing the surface of ... | 06/13/2006 |
