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Assignee: Energy Conversion Devices, Inc.


Location: Troy, MI
No. of patents: 358

1                  
NumberTitleIssue Date
6463874Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly ...
10/15/2002
6318453Hydrogen cooled hydrogen storage unit having maximized cooling efficiency
A hydrogen cooled hydrogen storage unit which employs excess hydrogen flow through flow channels between hydrogen storage alloy plates in order to provide convective cooling of the plates. The unit provides for high packing density of the storage material...
11/20/2001
6305442Hydrogen-based ecosystem
A complete infrastructure system for the generation, storage, transportation, and delivery of hydrogen which makes a hydrogen ecosystem possible. The infrastructure system utilizes high capacity, low cost, light weight thermal hydrogen storage alloy mater...
10/23/2001
6293110Hydrogen cooled hydride storage unit
A hydrogen gas cooled hydrogen storage element which includes a hydrogen storage alloy material in which hydrogen flow channels are provided. The flow channels provide pathways through the hydrogen storage material to allow for high speed hydrogen gas flo...
09/25/2001
6245280Method and apparatus for forming polycrystalline particles
A method and apparatus for forming polycrystalline particles by gas phase condensation employing arc plasma evaporation. The disclosed method and apparatus may be employed to form polycrystalline particles from high-melting temperature, low evaporation pr...
06/12/2001
6210498Hydrogen storage alloys and methods and improved nickel metal hydride electrodes and batteries using same
Reversible hydrogen storage alloys and methods and electrodes formed therefrom for nickel metal hydride batteries, in which the alloys are quenched from a melt at cooling rates selected to provide a high degree of disorder with an optimum local environmen...
04/03/2001
6209482Large area microwave plasma apparatus with adaptable applicator
A microwave apparatus for sustaining a substantially uniform plasma over a relatively large area. The microwave apparatus comprises a vacuum vessel for sustaining the plasma in a plasma region thereof. The apparatus further comprises a nonevanescent micro...
04/03/2001
6193929High storage capacity alloys enabling a hydrogen-based ecosystem
Hydrogen propelled vehicles and fundamentally new magnesium-based hydrogen storage alloy materials which for the first time make it feasible and practical to use solid state storage and delivery of hydrogen to power internal combustion engine or fuel cell...
02/27/2001
6186090Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly ...
02/13/2001
6177213Composite positive electrode material and method for making same
A composite positive electrode material for use in electrochemical cells. The composite material may comprise a particle of positive electrode material, and a conductive material at least partially embedded within the particle of positive electrode materi...
01/23/2001
6171726Active electrode composition with nonfilbrillating binder
An active composition for an electrode of an electrochemical cell. The active composition comprises an electrode material, and a nonfibrillating polymeric binder. The polymeric binder may comprise a fluoradditive. Also disclosed in an electrode and an ele...
01/09/2001
6143373Method of synthetically engineering alloys formed of high melting point and high vapor pressure materials
A process for fabricating synthetic materials by atomic alloying of a host material. Energetic high vapor pressure modifier elements or species are introduced into the host matrix of a fluidic precursor high metling point material so as to obtain an engin...
11/07/2000
6141241Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
A universal memory element having multi-level, non-detectable states and methods and apparatus for programming the same, and methods and applications embodying the same in neural networks, artificial intelligence and data storage systems. The universal me...
10/31/2000
6103024Magnesium mechanical alloys for thermal hydrogen storage
A mechanically alloyed hydrogen storage material having 75-95 atomic percent Mg, 5-15 atomic percent Ni, 0.5-6 atomic percent Mo, and at least one additional element selected from the group consisting of Al, C, Ca, Ce, Co, Cr, Cu, Dy, Fe, La, Mn, Nd, Si, ...
08/15/2000
6099811Self-heating metal-hydride hydrogen storage system
A self-heating metal-hydride hydrogen storage system comprising: a primary metal-hydride storage container housing a metal-hydride hydrogen storage material, the primary storage container having a hydrogen outlet port; a hydrogen combustor housed within t...
08/08/2000
6087580Semiconductor having large volume fraction of intermediate range order material
A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the...
07/11/2000
6087674Memory element with memory material comprising phase-change material and dielectric material
An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for ...
07/11/2000
6075719Method of programming phase-change memory element
A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy suffic...
06/13/2000
6028393E-beam/microwave gas jet PECVD method and apparatus for depositing and/or surface modification of thin film materials
A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrat...
02/22/2000
6019955Active nickel hydroxide material having controlled water content
An nickel hydroxide positive electrode active material which can be made by an ultrasonic precipitation method. The nickel hydroxide active material is characterized by the composition: ##EQU1## where x, the number of water ligands surrounding each N...
02/01/2000
5976276Magnesium mechanical alloys for thermal hydrogen storage
Mechanically alloyed hydrogen storage materials having a major atomic percentage of magnesium and a minor atomic percentage of at least two elements selected from the group consisting of nickel, molybdenum, iron and titanium. Preferably the mechanical all...
11/02/1999
5948564Compositionally and structurally disordered multiphase nickel hydroxide positive electrode containing modifiers
A positive electrode for use in alkaline rechargeable electrochemical cells comprising: a material comprising a compositionally and structurally disordered multiphase nickel hydroxide host matrix which includes at least one modifier chosen from the group ...
09/07/1999
5933365Memory element with energy control mechanism
An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected elec...
08/03/1999
5916381Magnesium mechanical alloys for thermal hydrogen storage
Mechanically alloyed hydrogen storage materials having a major atomic percentage of magnesium and a minor atomic percentage of at least two elements selected from the group consisting of nickel, molybdenum, iron and titanium. Preferably the mechanical all...
06/29/1999
5912839Universal memory element and method of programming same
Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high r...
06/15/1999
5905003Beta to gamma phase cycleable electrochemically active nickel hydroxide material
An nickel hydroxide positive electrode active material which can be made by an ultrasonic precipitation method. The nickel hydroxide active material is characterized by the ability to reversibly cycle between the beta and gamma nickel hydroxide crystallin...
05/18/1999
5825046Composite memory material comprising a mixture of phase-change memory material and dielectric material
A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, ...
10/20/1998
5757446Liquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixels
An acute matrix liquid crystal display panel including 1) a plurality of liquid crystal display elements distributed in a matrix of rows and columns; 2) means for supplying video signals and display element selection signals, including row and column cond...
05/26/1998
5743970Photovoltaic module having an injection molded encapsulant
A photovoltaic module which includes at least one photovoltaic cell which is encapsulated in a non-reacted, injection molded polymeric material, thereby forming an environmental seal around the cell. The photovoltaic cell(s) are incorporated into a photov...
04/28/1998
5714768Second-layer phase change memory array on top of a logic device
The present invention is a computational unit comprising a logic processing device, and a memory array deposited on top of and communicating with the logic processing device. More specifically, the present invention is a computational unit comprising a lo...
02/03/1998
5697221Robust metal hydride hydrogen storage system
A modular metal hydride hydrogen storage system which can provide a robust and reliable source of hydrogen that can quickly and easily be modified for a variety of applications and environments. The hydrogen storage system comprises at least one storage m...
12/16/1997
5694054Integrated drivers for flat panel displays employing chalcogenide logic elements
The present invention defines a display driver for driving a flat panel display having rows and columns. The display driver has row and column drivers comprised of logic gates where each logic gate includes chalcogenide threshold switches. The logic gates...
12/02/1997
5694146Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels
An active matrix liquid crystal display panel including a plurality of Ovonic threshold switches each serially coupled between the corresponding row or column conductor and the liquid crystal display element. The Ovonic threshold switches act as display e...
12/02/1997
5687112Multibit single cell memory element having tapered contact
An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance...
11/11/1997
5670224Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates
A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. T...
09/23/1997
5597411Method of forming a single crystal material
A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention conte...
01/28/1997
5596522Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entir...
01/21/1997
5591501Optical recording medium having a plurality of discrete phase change data recording points
A phase change optical recording medium which includes 1) a substrate having a planar surface; and 2) a plurality of discrete data recording points deposited upon the substrate. The discrete data recording points are formed from a phase change material wh...
01/07/1997
5567241Method and apparatus for the improved microwave deposition of thin films
A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atm...
10/22/1996
5562776Apparatus for microwave plasma enhanced physical/chemical vapor deposition
A microwave plasma enhanced PVD/CVD apparatus and method. The apparatus includes an evacuable deposition chamber having a plasma region and a deposition region adjacent one another. The apparatus also includes a source of microwave energy, and a microwave...
10/08/1996
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