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Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.

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Assignee: Elpida Memory, Inc.


Location: Tokyo, JP
No. of patents: 871

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NumberTitleIssue Date
8184498Semiconductor memory device
A semiconductor memory device includes a row control circuit block and a column control circuit block each performing an access control over a memory cell array, a data I/O circuit block transmitting and receiving data to and from the memory cell array, and a contro...
05/22/2012
8183888Parity unit using 3-input NANDs
Disclosed herein is a logic circuit which responds to three signals to detect whether the number of signals taking one of logic-1 and logic-0 is odd or even, and includes five NAND gates. The first NAND gate is supplied with the first signal, the second signal and t...
05/22/2012
8179709Semiconductor device including antifuse element
An element isolation region exists at a side opposite to a diffusion layer region as seen from a channel region, without another electrode to which the same potential as one applied to the diffusion layer region is applied interposed between the channel region and t...
05/15/2012
8178971Semiconductor device and method of manufacturing the same
A ball grid array semiconductor device has a wiring substrate (2), a semiconductor chip (6) disposed on one surface side of the wiring substrate, and a bump arrangement (5) as external terminals disposed on a surface side, opposite to the one su...
05/15/2012
8178428Manufacturing method of semiconductor device and substrate processing apparatus
A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into...
05/15/2012
8174915Semiconductor memory device and method of testing the same
A device and a method controlling the device are provided. A first command is supplied to the device in synchronization with a clock signal of a first frequency. The first command is to have the device perform a first operation. The frequency of the clock signal is ...
05/08/2012
8174907Semiconductor device having data input/output unit connected to bus line
To provide a semiconductor device including: first and second bus lines; a first buffer connected between the first and second bus lines; second and third buffers connected to the first bus line; fourth and fifth buffers connected to the second bus line; first to fo...
05/08/2012
8174068Semiconductor device having vertical transistor, manufacturing method thereof, and data processing system
A semiconductor device includes: a semiconductor substrate; a silicon pillar provided perpendicularly to a main surface of the semiconductor substrate; a gate dielectric film that covers a portion of a side surface of the silicon pillar; an insulator pillar that cov...
05/08/2012
8173515Method for manufacturing semiconductor device
An oxide film and a liner film are formed on an inner wall of a trench in a semiconductor substrate. After filling an SOD film in the trench, a heat treatment is carried out. Part of the liner film in contact with the SOD film is removed to expose part of the SOD fi...
05/08/2012
8169089Semiconductor device including semiconductor chip and sealing material
A semiconductor device includes at least bonding wires between electrode pads on a main surface of a semiconductor chip and connection pads on a wiring board. The wires form loop shapes from the electrode pads of the semiconductor chip. The semiconductor device also...
05/01/2012
8169015Semiconductor device and manufacturing method therefor
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to ...
05/01/2012
8164372Semiconductor device having level shift circuit, control method thereof, and data processing system
To include a first level shift circuit that converts a first internal clock signal having an amplitude value of a first voltage into a second internal clock signal having an amplitude value of a second voltage, a second level shift circuit that converts a first inte...
04/24/2012
8164371Duty detection circuit, clock generation circuit including the duty detection circuit, and semiconductor device
To provide a duty detection circuit including: a plurality of duty detectors that detect a duty ratio of internal clocks; a controller that controls the plurality of duty detectors so that the plurality of duty detectors operates in different phases from one another...
04/24/2012
8164370Clock control circuit and semiconductor device including the same
A clock control circuit includes a phase determination circuit that generates a first phase determination signal based on a phase of an external clock signal, a counter circuit that updates a count value based on a second phase determination signal for each sampling...
04/24/2012
8164186BGA semiconductor device having a dummy bump
A BGA semiconductor device includes a semiconductor package and a mounting board mounting thereon the semiconductor package, wherein an array of signal electrodes of the semiconductor package and an array of signal electrodes of the mounting board are coupled togeth...
04/24/2012
8164129Semiconductor device enabling further microfabrication
A semiconductor device includes a plurality of MOS transistors and wiring connected to a source electrode or a drain electrode of the plurality of MOS transistors and, the wiring being provided in the same layer as the source electrode and the drain electrode in a s...
04/24/2012
8159062Semiconductor and a method of manufacturing the same
A method including forming an intermediate product, the intermediate product being configured to include a wiring substrate including a plurality of first electrodes, a plurality of second electrodes and a plurality of test electrodes, a first semiconductor chip mou...
04/17/2012
8158502Method of manufacturing a semiconductor device including a silicon pillar
A method of manufacturing a semiconductor device includes forming silicon pillar 11 on substrate 10, forming a protective film which covers an upper end portion and a lower end portion of a side surface of silicon pillar 11, forming a constricte...
04/17/2012
8154102Semiconductor device and manufacturing method thereof
A semiconductor device includes groove-like regions that are formed between two adjacent bit lines among a plurality of bit lines each having upper and side surfaces covered with a cap insulating film and a side-wall insulating film, respectively, a SiON film that c...
04/10/2012
8154076High and low voltage vertical channel transistors
A semiconductor device includes low voltage and high voltage transistors over a substrate. The low voltage transistor is configured by at least one unit transistor. The high voltage transistor is configured by a greater number of the unit transistors than the at lea...
04/10/2012
8149632Output circuit for a semiconductor memory device and data output method
An outputting transistor circuit of a push-pull structure has an outputting PMOS transistor and an outputting NMOS transistor connected in series between a first power supply and a grounded power supply. In a standby state, a voltage level of a gate terminal of the ...
04/03/2012
8145853Semiconductor memory apparatus, memory access control system and data reading method
In order to provide a semiconductor memory apparatus which can flexibly change the priority of reading requests when the reading request is issued and which do not exclusively use the memory bus, a semiconductor memory apparatus includes: a main memory which stores ...
03/27/2012
8144524Semiconductor device and semiconductor package including the same
To include a plurality of pad groups each including a first data I/O pad, a first power supply pad, a second data I/O pad, and a second power supply pad arranged in order in an X direction. The first data I/O pad is connected to a first data I/O buffer, and the seco...
03/27/2012
8140938Semiconductor memory device and error correction method thereof
A semiconductor memory device having an error correcting function, includes a memory array having a data area and a check code area, an operation circuit including an encode circuit coupled to the data area and the check code area, and a decode circuit coupled to th...
03/20/2012
8139424Semiconductor apparatus
A semiconductor apparatus includes a first internal voltage generator generating a first internal voltage in response to an external power supply voltage, a second internal voltage generator generating a second internal voltage in response to the external power supp...
03/20/2012
8139404Semiconductor memory device
The semiconductor memory device includes a control circuit that performs control of reading data from and writing data into each memory cell. The control circuit includes a flip-flop circuit that stores the data read from the memory cell and stores the data to be wr...
03/20/2012
8138743Band-gap reference voltage source circuit with switchable bias voltage
A band-gap reference voltage source circuit is constituted of a diode-pair circuit connected to a reference voltage output terminal, a first differential amplifier including a first transistor and a first operational amplifier, and a second differential amplifier in...
03/20/2012
8138536Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof
To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; a...
03/20/2012
8138094Method for manufacturing mask
Openings are formed in first and second mask layers. Next, diameter of the opening in the second mask layer is enlarged so that the diameter of the opening in the second mask layer becomes larger by a length X than diameter of the opening in the first mask layer. Th...
03/20/2012
8134877Semiconductor device having delay control circuit
A first delay circuit and a second delay circuit having different operation conditions from each other, a detection circuit that detects a difference in propagation speed of a pulse signal, which is simultaneously input to the first and second delay circuits, and a ...
03/13/2012
8134858Semiconductor device for supplying stable voltage to control electrode of transistor
A semiconductor device comprises an internal voltage generator circuit which includes a first transistor having a first and a second main electrode and a control electrode, a control circuit controlling a voltage between the second main electrode and the control ele...
03/13/2012
8134405Semiconductor device and timing control method for the same
A semiconductor device includes a power-supply control portion and a latch portion. The power-supply control portion supplies power to an internal circuit in response to an input signal synchronized with rising of clock. The latch portion latches the input signal in...
03/13/2012
8134398Device having gate with two buried portions with different widths
A dummy transistor and a field effect transistor are arranged in a second direction. The dummy transistor is located at least at one end in a second direction. ...
03/13/2012
8134239Address line wiring structure and printed wiring board having same
An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a c...
03/13/2012
8133779Method of fabricating a semiconductor device
A conductive film is formed to extend from a bottom and a sidewall of a recess formed in an interlayer insulating film onto a top surface of the interlayer insulating film. Dry etching of the conductive film is performed such that a portion of the conductive film re...
03/13/2012
8130565Semiconductor device
A semiconductor device includes internal voltage generating circuits, a switching circuit, load circuits, a control circuit. Each of the plurality of load circuits is supplied with voltage through the switching circuit from any one of the plurality of internal volta...
03/06/2012
8130015Clock generating circuit, semiconductor device including the same, and data processing system
To include a phase determining circuit that generates a first phase determination signal, a sampling circuit that samples the first phase determination signal and generates a second phase determination signal based on the sampled first phase determination signal, an...
03/06/2012
8129791Semiconductor device having a contact plug and manufacturing method thereof
There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insu...
03/06/2012
8129769Semiconductor device and manufacturing method thereof
A semiconductor device having a 6F2 memory cell whose size is defined by a numerical value of a design rule F, wherein: lower electrodes of capacitors included in the memory cell are supported by a support film; the support film is formed as a pattern com...
03/06/2012
8129709Nonvolatile memory device
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select active elements (23) formed in the active regions...
03/06/2012
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