Assignee: Elm Technology Corporation

Location: Saline, MI
No. of patents: 25

Number	Title	Issue Date
7550805	Stress-controlled dielectric integrated circuit General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	06/23/2009
7485571	Method of making an integrated circuit General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	02/03/2009
7479694	Membrane 3D IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	01/20/2009
7402897	Vertical system integration The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes...	07/22/2008
7385835	Membrane 3D IC fabrication General purpose methods for the fabrication of 5 integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconducto...	06/10/2008
7307020	Membrane 3D IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	12/11/2007
7242012	Lithography device for semiconductor circuit pattern generator General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	07/10/2007
7223696	Methods for maskless lithography General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	05/29/2007
7193239	Three dimensional structure integrated circuit A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red...	03/20/2007
7176545	Apparatus and methods for maskless pattern generation General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	02/13/2007
7138295	Method of information processing using three dimensional integrated circuits A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, red...	11/21/2006
6891387	System for probing, testing, burn-in, repairing and programming of integrated circuits A system which performs multi-functions including reducing the thickness of oxides on contact pads and probing, testing, burn-in, repairing, programming and binning of integrated circuits. The system includes: at least one module having a holding fixture, a wafer, a...	05/10/2005
6838896	Method and system for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus A single gas tight system may perform multi-functions including reducing the thickness of oxides on contact pads and probing, testing, burn-in, repairing, programming and binning of integrated circuits. A holding fixture holds a wafer having integrated circuits and ...	01/04/2005
6765279	Membrane 3D IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	07/20/2004
6713327	Stress controlled dielectric integrated circuit fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	03/30/2004
6714625	Lithography device for semiconductor circuit pattern generation General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	03/30/2004
6682981	Stress controlled dielectric integrated circuit fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a sem...	01/27/2004
6632706	Three dimensional structure integrated circuit fabrication process A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory ci...	10/14/2003
6563224	Three dimensional structure integrated circuit A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory ci...	05/13/2003
6551857	Three dimensional structure integrated circuits A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory ci...	04/22/2003
6288561	Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus A single gas tight system which performs multi-functions including reducing the thickness of oxides on contact pads and probing, testing, burn-in, repairing, programming and binning of integrated circuits. A system according to one embodiment of the prese...	09/11/2001
6020257	Membrane dielectric isolation IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a sem...	02/01/2000
6008126	Membrane dielectric isolation IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a sem...	12/28/1999
5946559	Membrane dielectric isolation IC fabrication General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a sem...	08/31/1999
5915167	Three dimensional structure memory A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory ci...	06/22/1999

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Assignee: Elm Technology Corporation