Assignee: ELPIDA MEMORY, INC.

Location: Chuo-ku, Tokyo, JP
No. of patents: 56

Number	Title	Issue Date
8090188	Apparatus including defect correcting system which repeats a correcting of a reticle pattern defect and a correcting method using the apparatus A reticle pattern defect correcting apparatus comprises a lithographic emulation system including an optical emulation system and a micromachining defect correcting system including a reticle defect correcting mechanism with a cantilever. Since correction of a retic...	01/03/2012
8085061	Output circuit of semiconductor device An output circuit of a semiconductor includes unit buffers, each unit buffer having transistors and resistors connected between a power source terminal VDDQ and an output terminal DQ, and transistors and resistors connected between a power source terminal VSSQ and a...	12/27/2011
8072827	Semiconductor storage device having redundancy area A semiconductor storage device is provided with: a memory cell array which includes a normal area and a redundancy area which replaces a defective memory cell in the normal area; a normal area refresh circuit which performs a CBR refresh operation of a memory cell w...	12/06/2011
8068369	Sense amplifier circuit and semiconductor memory device A single-ended sense amplifier circuit amplifies a signal of a memory cell and transmitted through a bit line, and comprises first and second MOS transistors. The first MOS transistor supplies a predetermined voltage to the bit line and controls connection between t...	11/29/2011
8053813	Semiconductor device and layout method thereof A semiconductor device includes first lines extending in a first direction and formed in a first wiring layer in a predetermined arrangement order, second lines formed in a second wiring layer different from the first wring layer in the predetermined arrangement ord...	11/08/2011
8023303	Semiconductor memory device and memory access method A semiconductor memory device includes: first and second memory mats; first and second local input output lines coupled to the first memory mat via a first amplifier circuit; third and fourth local input output lines different from the first and second local input o...	09/20/2011
8006026	Multi-port memory and computer system provided with the same A multi-port memory, comprising: m (m≧2) input/output ports independent of one another; n (n≧2) memory banks independent of one another; and a route switching circuit capable of optionally setting signal routes of a command, an address, and input/output data bet...	08/23/2011
7994812	Calibration circuit, semiconductor device including the same, and data processing system A semiconductor device adjusting an impedance level of an output buffer, includes a replica buffer circuit including a circuit configuration substantially identical to the output buffer, a counter circuit changing an impedance code to vary an impedance level of the ...	08/09/2011
7968254	Photomask reticle for use in projection exposure, and manufacturing methods therefor A photomask reticle for use in projection exposure to form a resist pattern on a workable film formed over a semiconductor substrate, includes a first area in which a light shield is formed, a second area formed around said first area, a third area formed around sai...	06/28/2011
7952950	Semiconductor device including anti-fuse circuit, and method of writing address to anti-fuse circuit An anti-fuse circuit according to the present invention includes an anti-fuse element that holds data in a nonvolatile manner and a latch circuit that temporarily holds data to be written to the anti-fuse element. The writing to the latch circuit can be performed in...	05/31/2011
7952383	Semiconductor device including output buffer and control circuit adjusting an impedance of the output buffer There is provided a semiconductor device that includes: an output buffer capable of adjusting an impedance based on an impedance adjustment signal, and a through-rate control circuit that adjusts a through rate of the output buffer based on at least the impedance ad...	05/31/2011
7944262	Duty correction circuit A duty correction circuit is formed using at least one delay circuit, which is constituted of a first inverter including three transistors of different conduction types and a second inverter including three other transistors of different conduction types and which d...	05/17/2011
7943470	Chip-stacked semiconductor device and manufacturing method thereof The semiconductor device according to the present invention includes a through electrode that penetrates through a silicon substrate, an isolation trench provided to penetrate through the silicon substrate to surround the through electrode, a silicon film in contact...	05/17/2011
7935576	Semiconductor device and manufacturing method of the same Semiconductor device 10 includes wiring substrate 11 including wiring 14 and wiring 15 in predetermined patterns, semiconductor chips 19 and 23 which are mounted on wiring substrate 11 with electrodes electrically con...	05/03/2011
7928551	Semiconductor device and method of manufacturing the same In a semiconductor device, a first semiconductor chip is stacked on a wiring substrate and has first electrode pads disposed at predetermined positions on an upper surface thereof. A second semiconductor chip is stacked on the first semiconductor chip through an ins...	04/19/2011
7922960	Fine resist pattern forming method and nanoimprint mold structure A light-transmitting mold structure having a mold pattern corresponding to a portion to form a pattern by nanoimprint and a conductive film pattern corresponding to a portion to form a pattern by nonadiabatic near-field exposure is used to irradiate UV light from a ...	04/12/2011
7919767	Semiconductor memory device and fabrication method thereof A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electr...	04/05/2011
7902858	Calibration circuit, semiconductor device including the same, and memory module A calibration circuit includes: a replica buffer that drives a calibration terminal; a pre-emphasis circuit connected in parallel to the replica buffer; and an up-down counter that changes impedances of the replica buffer and the pre-emphasis circuit. A replica cont...	03/08/2011
7898895	Semiconductor device A semiconductor device of the invention comprises: a memory cell array including memory cells formed at intersections between word lines and bit lines; first and second input/output ports each defined for inputting/outputting data of the memory cell array; sense amp...	03/01/2011
7898884	Semiconductor device and test method therefor Disclosed is a semiconductor device including internal power supply generating circuits for generating internal power supplies and data terminals via which data signals are output or input/output. The internal power supply monitor terminals are in common use with th...	03/01/2011
7892925	Method of forming semiconductor device having three-dimensional channel structure A method of forming a semiconductor device is provided. A hollowed portion is formed over an active region of a semiconductor substrate. The bottom of the hollowed portion is lowered in level than the surface of an isolation region of the substrate. A first mask is ...	02/22/2011
7875518	Semiconductor device having silicon layer in a gate electrode A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implant...	01/25/2011
7868417	Semiconductor device including a plurality of fuse elements and attenuation members between or around the plurality of fuse elements A semiconductor device includes plural fuse elements which can be disconnected by irradiating a laser beam, and attenuation members which are located between the plural fuse elements as viewed two-dimensionally and can attenuate the laser beam. Each attenuation memb...	01/11/2011
7868312	Semiconductor memory device and manufacturing method thereof A semiconductor memory device is provided in which a phase-change layer can be formed stably and electric current required to cause the phase change of the phase-change layer can be reduced. An edge portion of the phase-change layer is formed above a lower electrode...	01/11/2011
7852145	Semiconductor device having power supply system A semiconductor device is provided which includes: a first semiconductor integrated circuit; a ground line and a power supply line trough which electric power is supplied to the first semiconductor integrated circuit; and a variable impedance component which is conn...	12/14/2010
7834415	Semiconductor device with trench isolation structure and method of manufacturing the same A semiconductor device has: a substrate provided with a trench; and a device isolation structure formed in the trench. The device isolation structure has: a silicon oxynitride film formed on a surface of the substrate through an interfacial oxide film; and an embedd...	11/16/2010
7829470	Method for manufacturing semiconductor device A contact hole, after hole etching, is subjected to light etching using a process gas containing a fluorocarbon-based gas and oxygen, with the oxygen being enriched, under condition without applying bias. Then, reaction products (5) having C—F bond and adhe...	11/09/2010
7826305	Latency counter, semiconductor memory device including the same, and data processing system A latency counter includes: a frequency-dividing circuit that generates a plurality of divided clocks LCLKE and LCLKO of which the phases differ each other based on an internal clock LCLK; and frequency-divided counter circuits each of which counts a latency of an i...	11/02/2010
7826295	Semiconductor memory device including a repair circuit which includes mode fuses In a semiconductor memory device, a repair circuit includes mode fuses to select one of plural repair modes corresponding to plural kinds of defects, respectively. The semiconductor memory device can repair a defective memory cell having operational margin defect wi...	11/02/2010
7826241	Semiconductor memory device that can relieve defective address A pre-decoded address is generated at a high speed in a semiconductor memory device. The device comprises a pre-decoder (210) for generating a first pre-decoded address (PDA1) by pre-decoding the input address (ADD), a CAM circuit (220) for acti...	11/02/2010
7816949	Signal transmission circuit and signal transmission system using the same A signal transmission circuit includes first and second power source wirings, and a plurality of differential circuits connected in series between the first and second power source wirings. A signal transmission system includes a plurality of pairs of signal wirings...	10/19/2010
7816768	Semiconductor device including ground and power-supply planes and a dielectric layer between the ground and power-supply planes A high dielectric loss tangent layer is provided in a dielectric layer between a power-supply plane and a ground plane. The high dielectric loss tangent layer is arranged such that its edge is located between the edge of the power-supply plane and the edge of the gr...	10/19/2010
7816281	Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon substrate, and forming a silicon nitride film on the silicon oxide film. The step of forming the silicon nitride film includes the steps of growing a fi...	10/19/2010
7813178	Semiconductor memory device and write control method therefor Disclosed is a semiconductor memory device which includes a read data latch that holds read data from a phase change memory and latches write data entered from outside and holds write data entered from outside, a write data latch that holds the write data for a cell...	10/12/2010
7795706	Stacked memory without unbalanced temperature distributions A stacked memory without unbalanced temperature distributions is disclosed. According to one aspect of the invention, a through electrode in each layer is connected one after the other such that regions to be activated in neighboring layers do not overlap in a verti...	09/14/2010
7795689	Semiconductor device including a germanium silicide film on a selective epitaxial layer A process for manufacturing a semiconductor device includes: forming first contact holes in a dielectric film for a PMOS transistor; depositing germanium on the source/drain regions of the PMOS transistor exposed from the first contact holes; heat treating the germa...	09/14/2010
7791402	Electric fuse determination circuit and determination method An electrical fuse determination circuit that can speedily and reliably incorporate an electrical fuse data and improve a reliability of electrical fuse device, includes a first electrical fuse device of which one end connects with a higher voltage, a second electri...	09/07/2010
7777517	Signal transmission circuit and characteristic adjustment method thereof, memory module, and manufacturing method of circuit board A signal transmission circuit comprising: first and second transmission lines connected to each other; a first impedance storage circuit storing an impedance of the first transmission line; and a control circuit that outputs match information between an impedance of...	08/17/2010
7777350	Semiconductor stack package having wiring extension part which has hole for wiring A semiconductor stack package includes a first printed wiring board; a plurality of semiconductor chips stacked on the first printed wiring board, wherein among the semiconductor chips, the uppermost semiconductor chip has an electrode pad for providing power supply...	08/17/2010
7768312	Semiconductor device and driver control method A semiconductor device of the invention has a plurality of P-channel transistors, to which resistance elements are inserted in series, prepared on a pull-up side of a driver such that an ON resistance value on the P-channel transistor side and a resistance value of ...	08/03/2010

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Assignee: ELPIDA MEMORY, INC.