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| Number | Title | Issue Date |
| 8184026 | Mobile industry processor interface An optimized Mobile Industry Processor Interface (MIPI) includes a transmitter physical (PHY) layer configured to convert input data into serial data and transmit the serial data in synchronization with a high-speed clock, a receiver PHY layer configured to convert ... | 05/22/2012 |
| 8183664 | Electrostatic discharge protection device, method of manufacturing the same, method of testing the same An electrostatic discharge protection device, a method of manufacturing the same, and a method of testing the same. The electrostatic protection device includes a plurality of device isolation regions formed in a semiconductor substrate at a predetermined width and ... | 05/22/2012 |
| 8183632 | Semiconductor device and method of manufacturing the same Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate formed therein with a first conductive type well, and an LDMOS device formed on the substrate. The LDMOS device includes a gate electrode, gate... | 05/22/2012 |
| 8183140 | Semiconductor device and method of fabricating the same A method of fabricating a semiconductor device and a flash memory device are provided. The method of fabricating the semiconductor device includes: forming a nitride film on a semiconductor substrate; forming a sacrificial vertical structure on the nitride film; for... | 05/22/2012 |
| 8183083 | Method for manufacturing back side illumination image sensor Disclosed is a method for manufacturing a back side illumination image sensor. The method includes defining a pixel area by forming a first isolation area in a first substrate; forming a photo detecting unit buried in the pixel area; forming an ion implantation laye... | 05/22/2012 |
| 8183080 | Image sensor and manufacturing method thereof An image sensor has a large bridge margin from a repulsive force between adjacent micro lenses having different surface properties. The image sensor has a larger bridge margin with a configuration of a stepped portion between two areas, where the first and the secon... | 05/22/2012 |
| 8178948 | Electrostatic discharge protection circuit An electrostatic discharge (ESD) protection circuit includes a substrate, and a plurality of unit bipolar transistors formed in the substrate. Each of the plurality of unit bipolar transistors may include a first-conductivity-type buried layer formed in the substrat... | 05/15/2012 |
| 8178937 | Image sensor and method for manufacturing the same Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes an isolation trench formed in a semiconductor substrate corresponding to a logic region and a pixel separating trench formed on the semiconductor substrate corresponding... | 05/15/2012 |
| 8178912 | Image sensor for minimizing a dark current and method for manufacturing the same An image sensor includes a first substrate, readout circuitry, an electrical junction region, a metal interconnection and an image sensing device. The readout circuitry is formed on and/or over the first substrate and the electrical junction region is formed in the ... | 05/15/2012 |
| 8178432 | Semiconductor device and method for fabricating the same Semiconductor devices and methods for fabricating the same are disclosed. The semiconductor device includes gate electrodes having sidewall spacers on a semiconductor substrate, double diffusion drain regions in the semiconductor substrate adjacent to the sidewall s... | 05/15/2012 |
| 8178381 | Back side illumination image sensor and method for manufacturing the same Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the p... | 05/15/2012 |
| 8173500 | Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device A poly-emitter type bipolar transistor includes a buried layer formed over an upper portion of a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a collector area formed on the epitaxial layer and connected to the buried layer, a ba... | 05/08/2012 |
| 8173480 | Image sensor and method for manufacturing the same An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A meth... | 05/08/2012 |
| 8169828 | Semiconductor memory cell, method for manufacturing the same and method for operating the same A semiconductor memory cell, and method of manufacturing a semiconductor memory cell and an method of operating a semiconductor memory cell. A method of operating may include programming a semiconductor memory cell by applying a preset programming voltage to a commo... | 05/01/2012 |
| 8169044 | Image sensor and method for manufacturing the same Embodiments provide an image sensor. The image sensor includes readout circuitry, an interlayer dielectric, an interconnection, and an image sensing device. The interconnection includes a lower barrier metal and a nitride barrier formed under the lower barrier metal... | 05/01/2012 |
| 8169038 | Semiconductor device and method of manufacturing the same A semiconductor device and a method of manufacturing the same are disclosed. The method includes forming ion impurity regions of a first conductivity type by forming a trench in a semiconductor substrate and implanting impurity ions into a lower portion of the trenc... | 05/01/2012 |
| 8168526 | Semiconductor chip package and method for manufacturing thereof A semiconductor chip package and a method for manufacturing thereof includes sequentially forming upper dielectric layer patterns and lower dielectric patterns over a substrate to expose an underlying metal line such that the lower dielectric layer patterns overlap ... | 05/01/2012 |
| 8164955 | NOR flash memory device and method for fabricating the same Embodiments of a NOR flash memory and method for fabricating the same are provided. Bit lines can be formed as self-aligned source and drain regions between adjacent first polysilicon patterns. Contacts for the source and drain regions can be provided according to b... | 04/24/2012 |
| 8164155 | Semiconductor device and method of manufacturing the same A method for manufacturing a semiconductor device includes forming an N-well and a P-well formed in a semiconductor substrate. An isolation layer may be formed in the semiconductor substrate. At least one dummy active pattern may be formed in a boundary area between... | 04/24/2012 |
| 8163590 | Image sensor and method for manufacturing the same Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating laye... | 04/24/2012 |
| 8159077 | Pad in semicondcutor device and fabricating method thereof A pad in a semiconductor device and fabricating method thereof are disclosed. The pad includes an uppermost metal layer first to Nth intermediate metal layers, wherein capacitors configured or formed by the uppermost metal layer and the first to Nth ... | 04/17/2012 |
| 8159005 | Image sensor An image sensor and manufacturing method thereof are provided. The image sensor can include a readout circuitry, an interconnection, a second interlayer dielectric, an image sensing device, a contact plug, and a sidewall dielectric. The contact plug can electrically... | 04/17/2012 |
| 8156365 | Data reception apparatus A data reception apparatus is disclosed. The data reception apparatus includes a strobe extractor for receiving a transmission signal and extracting a strobe signal from the transmission signal, the transmission signal including the strobe signal inserted between da... | 04/10/2012 |
| 8154095 | Image sensor and method for manufacturing the same Provided is an image sensor that comprises a readout circuitry, an interlayer dielectric, an interconnection, an image sensing device, an ion implantation region, a contact, and a pixel separation layer. The readout circuitry is disposed at a first substrate. The in... | 04/10/2012 |
| 8153518 | Method for fabricating metal interconnection of semiconductor device In a method for fabricating a metal interconnection of a semiconductor device, a lower interconnection and a lower insulation layer are formed over a semiconductor substrate. An etch stop layer is formed over the lower insulation layer. An upper insulation layer is ... | 04/10/2012 |
| 8153508 | Method for fabricating image sensor A method for fabricating an image sensor is provided. In the image sensor fabrication method, an interconnection and a dielectric interlayer are formed on a semiconductor substrate including a readout circuit. An image sensing unit is formed on a carrier substrate o... | 04/10/2012 |
| 8153465 | Image sensor and method for manufacturing the same An image sensor and manufacturing method thereof are provided. The image sensor includes a readout circuitry, an electrical junction region, an interconnection, and an image sensing device. The readout circuitry can be disposed at a first substrate, and the electric... | 04/10/2012 |
| 8148903 | Light emitting diode driving circuit A LED driving circuit that may control current flow into an LED on a current path according to the amount of light sensed from the LED. An LED driving circuit for driving at least one LED may include at least one of: An optical sensor for receiving light emitted fro... | 04/03/2012 |
| 8148190 | Semiconductor device and method of manufacturing the same Disclosed are methods of manufacturing a semiconductor device. The method of manufacturing one semiconductor device includes forming a transistor structure on a semiconductor substrate, forming a metal interconnection layer on the transistor structure, forming a pro... | 04/03/2012 |
| 8144863 | Method and apparatus for echo cancellation A technique of echo cancellation in a communication system. A method and/or apparatus of echo cancellation that may be suitable for performing echo cancellation under single talk and double talk conditions. A method and/or apparatus of echo cancellation that may sig... | 03/27/2012 |
| 8143139 | Method of fabricating extended drain MOS transistor A method of fabricating an extended drain MOS transistor which reduces a design rule and prevents the generation of leakage current. The method includes sequentially forming a diffusion film, a first conductive epitaxial layer, a gate oxide layer and a hard mask lay... | 03/27/2012 |
| 8138565 | Lateral double diffused metal oxide semiconductor device and method of making the same An LDMOS device and method for making the same are disclosed. The LDMOS device comprises a first well, a second well, a third well, a first ion implantation region, and a second ion implantation region. The first well is in a semiconductor substrate. The second well... | 03/20/2012 |
| 8138545 | Semiconductor device and method for manufacturing the same A semiconductor device includes: a substrate on and/or over which a first conductive type well is formed; and an LDMOS device that includes a gate electrode and has a drain region formed in the substrate. The LDMOS device includes a trench formed on the substrate, a... | 03/20/2012 |
| 8138086 | Method for manufacturing flash memory device A method of manufacturing a flash memory device and devices thereof, which may be capable of preventing damage to a gate. A method of manufacturing a flash memory device may include preparing a semiconductor substrate having an active region defined by a device sepa... | 03/20/2012 |
| 8138044 | Method for manufacturing semiconductor flash memory and flash memory cell A semiconductor flash memory includes a tunnel oxide film formed over a semiconductor substrate, a first spacer composed of polysilicon formed over the semiconductor substrate including the tunnel oxide film, a second spacer composed of an insulating material formed... | 03/20/2012 |
| 8133790 | Semiconductor device and method for fabricating the same A semiconductor device and a method of manufacturing a semiconductor device. A method may include forming a first well by injecting first conduction type impurity ions on and/or over a semiconductor substrate, forming an extended drain region overlapped with a regio... | 03/13/2012 |
| 8133754 | Image sensor and method for manufacturing the same An image sensor is disclosed that includes a first substrate including an electric junction region, a transistor, and a metal line connected to the electric junction region or the transistor; and a photodiode formed on the first substrate. The first substrate is for... | 03/13/2012 |
| 8130011 | Power IC and driving method thereof A power integration circuit includes: a first transistor having a control electrode connected to a first voltage source to be supplied with a control signal therefrom, the first transistor being connected between a switch and a ground. A sense resistor has one end c... | 03/06/2012 |
| 8129809 | Image sensor and manufacturing method thereof Disclosed are an image sensor and a manufacturing method thereof. The image sensor includes a circuit layer on a first surface of a semiconductor substrate, a metal interconnection layer on the circuit layer, trenches formed in a second surface of the semiconductor ... | 03/06/2012 |
| 8125026 | Gate of trench type MOSFET device and method for forming the gate A gate of a trench type MOSFET device and a method of forming a gate. A gate of a trench type MOSFET device may include a gate oxide film formed on and/or over a trench type gate poly such that parasitic capacitance may be produced in a gate poly. An electric field ... | 02/28/2012 |
