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| Number | Title | Issue Date |
| 7341905 | Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices A process for making an integrated circuit is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence consists of sixteen specific mask steps that permit a variety of bipolar/CMOS/DMOS devices to be fabr... | 03/11/2008 |
| 7160752 | Fabrication of advanced silicon-based MEMS devices A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on th... | 01/09/2007 |
| 7144750 | Method of fabricating silicon-based MEMS devices A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopan... | 12/05/2006 |
| 7138293 | Wafer level packaging technique for microdevices A method is disclosed for fabricating a integrated device, such as a MEMS device. A first wafer is provided on an exposed surface with a layer of gold, gold alloy or gold compound. A second wafer is provided on its exposed surface with under-layer of gold, gold allo... | 11/21/2006 |
| 6937806 | Method of making photonic devices with SOG interlayer A method of making a photonic device having at least two layers formed over a substrate, preferably by plasma enhanced chemical vapor deposition, involves depositing a thin spin-on glass (SOG) interlayer between at least one adjacent pair of layers to improve the ro... | 08/30/2005 |
| 6887514 | Method of depositing optical films To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapor Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of which a set of four independent variables relate to the flow-rate of... | 05/03/2005 |
| 6770213 | Method of inspecting an anisotropic etch in a microstructure A method is disclosed for evaluating an anisotropic etch in a microstructure. First a film is formed on a substrate. Next a series of holes of progressively different area and having specific geometric shapes are formed through the film. An anisotropic etch is carri... | 08/03/2004 |
| 6724967 | Method of making a functional device with deposited layers subject to high temperature anneal A method is disclosed for making a device having one or more deposited layers and subject to a post deposition high temperature anneal. Opposing films having similar mechanical properties are deposited on the front and back faces of a wafer, which is subsequently su... | 04/20/2004 |
| 6716476 | Method of depositing an optical quality silica film by PECVD A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predet... | 04/06/2004 |
| 6686214 | Method of aligning a photolithographic mask to a crystal plane In order to align a mask to a specific crystal plane in a wafer, a first mask having at least one alignment structure is deposited on the wafer surface. The alignment structure is coarsely aligned with the specific crystal plane and has an array of compon... | 02/03/2004 |
| 6656528 | Method of making specular infrared mirrors for use in optical devices A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600° C. The wafer surface is etched at a temperatur... | 12/02/2003 |
| 6602791 | Manufacture of integrated fluidic devices In a method of fabricating a microstructure for microfluidics applications, a first layer of etchable material is formed on a suitable substrate. A mechanically stable support layer is formed over the etchable material. A mask is applied over the support ... | 08/05/2003 |
| 6573133 | Method of forming spacers in CMOS devices A sidewall spacer is formed in a CMOS device by depositing a layer of silicon nitride on a wafer and anisotropically etching away the silicon nitride layer with a chorine-based plasma etchant.... | 06/03/2003 |
| 6555441 | Method of aligning structures on opposite sides of a wafer A method is disclosed for aligning structures on first and second opposite sides of a wafer. First one or more transparent islands are formed on the first side of the wafer at an alignment location. The transparent islands have an exposed front side and a... | 04/29/2003 |
| 6537623 | Manufacture of silica waveguides with minimal absorption An improved high temperature chemical treatment of deposited silica films wherein they are subjected to a reactive ambient comprising hydrogen and oxygen atoms. This method results in better elimination of residual undesirable oscillators so as to provide... | 03/25/2003 |
