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| Number | Title | Issue Date |
| 7883949 | Methods of forming silicon carbide switching devices including P-type channels Methods of forming a p-channel MOS device in silicon carbide include forming an n-type well in a silicon carbide layer, and implanting p-type dopant ions to form a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defi... | 02/08/2011 |
| 7462861 | LED bonding structures and methods of fabricating LED bonding structures An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding w... | 12/09/2008 |
| 7456499 | Power light emitting die package with reflecting lens and the method of making the same A light emitting die package and a method of manufacturing the die package are disclosed. The die package includes a leadframe, at least one light emitting device (LED), a molded body, and a lens. The leadframe includes a plurality of leads and has a top side and a ... | 11/25/2008 |
| 7456443 | Transistors having buried n-type and p-type regions beneath the source region High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided.... | 11/25/2008 |
| 7449353 | Co-doping for fermi level control in semi-insulating Group III nitrides Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep l... | 11/11/2008 |
| 7446345 | Light emitting devices with active layers that extend into opened pits Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the pl... | 11/04/2008 |
| 7442564 | Dispensed electrical interconnections An electronic device includes a substrate, an electrical element on the substrate, a nonconductive adhesive material on the substrate, and a conductive adhesive material on the electrical element and extending onto the nonconductive adhesive material. Methods of for... | 10/28/2008 |
| 7439609 | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal so... | 10/21/2008 |
| 7432142 | Methods of fabricating nitride-based transistors having regrown ohmic contact regions Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a c... | 10/07/2008 |
| 7432536 | LED with self aligned bond pad A method is disclosed for attaching a bonding pad to the ohmic contact of a diode while reducing the complexity of the photolithography steps. The method includes the steps of forming a blanket passivation layer over the epitaxial layers and ohmic contacts of a diod... | 10/07/2008 |
| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segr... | 09/23/2008 |
| 7422634 | Three inch silicon carbide wafer with low warp, bow, and TTV A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness variation of less than about 2.0 μm. ... | 09/09/2008 |
| 7419892 | Semiconductor devices including implanted regions and protective layers and methods of forming the same Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, ... | 09/02/2008 |
| 7419912 | Laser patterning of light emitting devices Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the ... | 09/02/2008 |
| 7420222 | Light emitting diodes including transparent oxide layers Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substra... | 09/02/2008 |
| 7414268 | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge... | 08/19/2008 |
| 7405094 | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same Broad spectrum light emitting devices and methods and semiconductor chips for fabricating such devices include a light emitting element, such as a diode or laser, which emits light in a predefined range of frequencies. The light emitting element includes a shaped su... | 07/29/2008 |
| 7405093 | Methods of assembly for a semiconductor light emitting device package Methods of assembly for a semiconductor light emitting device package may include positioning a submount on a mounting substrate with a solder material and a flux therebetween. The semiconductor light emitting device is positioned on a top side of the submount with ... | 07/29/2008 |
| 7405430 | Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation ... | 07/29/2008 |
| 7402844 | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods A unit cell of a metal-semiconductor field-effect transistor (MESFET) is provided. The unit cell includes a MESFET having a source, a drain and a gate. The gate is between the source and the drain and on a channel layer of the MESFET. The channel layer has a first t... | 07/22/2008 |
| 7402837 | Light emitting devices with self aligned ohmic contacts Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region... | 07/22/2008 |
| 7396410 | Featuring forming methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., obliq... | 07/08/2008 |
| 7393790 | Method of manufacturing carrier wafer and resulting carrier wafer structures A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a pr... | 07/01/2008 |
| 7391057 | High voltage silicon carbide devices having bi-directional blocking capabilities High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provi... | 06/24/2008 |
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 ... | 06/24/2008 |
| 7390367 | Housing assembly for an induction heating device including liner or susceptor coating A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the ... | 06/24/2008 |
| 7387680 | Method and apparatus for the production of silicon carbide crystals A method and apparatus for growing silicon carbide crystals is provided. The apparatus includes a sublimation chamber with a plurality of spaced apart dividers that can direct the direction of silicon carbide crystal growth into passages between the dividers to form... | 06/17/2008 |
| 7388236 | High efficiency and/or high power density wide bandgap transistors Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power ... | 06/17/2008 |
| 7385574 | True color flat panel display module A full color flat panel display module is formed of a matrix of pixels in rows and columns. Each pixel is formed of respective red, green and blue solid state light emitting diodes that can form any color on that portion of a CIE curve that falls within a triangle w... | 06/10/2008 |
| 7384809 | Method of forming three-dimensional features on light emitting diodes for improved light extraction A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjace... | 06/10/2008 |
| 7381992 | Silicon carbide power devices with self-aligned source and well regions Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region of a first conductivity type, a buried silicon carbide region... | 06/03/2008 |
| 7372198 | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor Semiconductor light emitting devices include a semiconductor light emitting element having a light emitting surface, and a patternable film including transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film may be a... | 05/13/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7368971 | High power, high frequency switch circuits using strings of power transistors High power, high frequency switches include a transmission line having at least three portions that are serially coupled between an input port and an output port to define at least two nodes and to carry a high power, high frequency signal between the input port and... | 05/06/2008 |
| 7368756 | Trench cut light emitting diodes and methods of fabricating same A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions.... | 05/06/2008 |
| 7365371 | Packages for semiconductor light emitting devices utilizing dispensed encapsulants A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant regio... | 04/29/2008 |
| 7364617 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient bet... | 04/29/2008 |
| 7364988 | Method of manufacturing gallium nitride based high-electron mobility devices A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to p... | 04/29/2008 |
| 7358954 | Synchronized light emitting diode backlighting systems and methods for displays A display screen includes at least two arrays of at least two different color picture elements. A backlighting system for the display includes at least two arrays of Light Emitting Diode (LED) devices that are configured to radiate light of at least two colors in a ... | 04/15/2008 |
| D566057 | LED chip | 04/08/2008 |
