Did You Know...
...that a workman who left the soap mixing machine on too long was responsible for making Ivory Soap? He was so embarrassed by his mistake that he threw the mess in a stream. Imagine his dismay when the evidence of his error floated to the surface! Result: Ivory soap, the soap that floats.
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| Number | Title | Issue Date |
| 8148753 | Compound semiconductor substrate having multiple buffer layers The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an Al | 04/03/2012 |
| 8143557 | Plane heater To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricit... | 03/27/2012 |
| 8071920 | Planar heater A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter sili... | 12/06/2011 |
| 7977219 | Manufacturing method for silicon wafer In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment... | 07/12/2011 |
| 7909931 | Silica glass crucible The present invention provides a silica glass crucible for manufacturing a silicon single crystal, in which melt vibration can be controlled more certainly and a high yield of single crystal can be realized. A first substantially bubble-free layer 10a ... | 03/22/2011 |
| 7679730 | Surface inspection apparatus and surface inspection method for strained silicon wafer An image pickup device disposed in a predetermined position relative to a surface of a strained silicon wafer photographs the surface of the strained silicon wafer in a plurality of rotation angle positions on photographing conditions under which bright lines appear... | 03/16/2010 |
| 7608553 | Transparent rare-earth oxide sintered body and manufacturing method thereof The invention intends to obtain a transparent yttrium oxide sintered body of which in-line transmittance in a visible wavelength region of 400 to 800 nm at a thickness of 1 mm is 60% or more, without using aluminum that readily segregates in grain boundaries of yttr... | 10/27/2009 |
| 7588638 | Single crystal pulling apparatus A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is p... | 09/15/2009 |
| 7514364 | Hydrophilicity treatment method of a silicon wafer In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the mirror surface is pushed onto the cloth under the application of a sm... | 04/07/2009 |
| 7485593 | Titania-silica glass To provide titania-silica glass which is transparent glass of low thermal expansion, in particular, is of a low thermal expansion coefficient over a wide range of temperatures of 0 to 100° C. (an operating temperature range) when it is used as a photomask or a mirr... | 02/03/2009 |
| 7476634 | Yttria sintered body and manufacturing method therefor To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crys... | 01/13/2009 |
| 7403278 | Surface inspection apparatus and surface inspection method A surface inspection apparatus, for inspecting a plurality of surfaces formed in a peripheral edge portion of a plate-like object, includes a image pickup mechanism, which photographs the peripheral edge portion of the plate-like object having a plurality of surface... | 07/22/2008 |
| 7396409 | Acicular silicon crystal and process for producing the same By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively fo... | 07/08/2008 |
| 7393418 | Susceptor A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface port... | 07/01/2008 |
| 7381362 | Production method for ceramic porous material To provide a method for producing a ceramic porous material which has a high strength, though it has a high porosity, and which is excellent in permeability without dust generation. In a ceramic porous material having a three-dimensional mesh-like skeleton structure... | 06/03/2008 |
| 7374955 | Method of manufacturing silicon wafer The present invention provides a method of manufacturing a silicon wafer where a defect does not exist at a wafer surface layer part on which a device is formed, without affecting productivity and production costs of the wafer. An ingot of a silicon single cr... | 05/20/2008 |
| 7368757 | Compound semiconductor and compound semiconductor device using the same A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-102... | 05/06/2008 |
| 7336892 | Reflection plate for semiconductor heat treatment and manufacturing method thereof It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is... | 02/26/2008 |
| 7291220 | Process of producing silicon wafer A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014 to 5.0×1015 atoms/cm3 and oxygen concentration of 1.27×1018 to 3.0×1018 | 11/06/2007 |
| 7262485 | Substrate for growing electro-optical single crystal thin film and method of manufacturing the same A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substr... | 08/28/2007 |
