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| Number | Title | Issue Date |
| 8183588 | High efficiency group III nitride LED with lenticular surface A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by ... | 05/22/2012 |
| 8182119 | Lighting devices and methods of installing light engine housings and/or trim elements in lighting device housings A lighting device, comprising a housing and at least one mounting clip. The housing comprises an electrical connection region engageable in an electrical receptacle. The mounting clip is pivotable from a first position, where an end region of the mounting clip does ... | 05/22/2012 |
| D660257 | Emitter package | 05/22/2012 |
| 8178888 | Semiconductor light emitting devices with high color rendering A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a w... | 05/15/2012 |
| 8177382 | Apparatus and methods for multiplanar optical diffusers and display panels for using the same Provided are solid state lighting devices that include multiple solid state light emitters that are configured to emit light and a multiplane light diffuser including a first diffusion plane and a second diffusion plane that are separated by a gap, the multiplane li... | 05/15/2012 |
| D659657 | Light emitting diode (LED) package | 05/15/2012 |
| 8174205 | Lighting devices and methods for lighting A lighting device comprises groups of solid state light emitters, a sensor and circuitry. If the emitters are illuminated, the sensor is exposed to combined light from the groups, and senses only a portion of the combined light. The circuitry adjusts current applied... | 05/08/2012 |
| 8174089 | High voltage switching devices and process for forming same The present invention relates to various switching device structures including Schottky diode, P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low do... | 05/08/2012 |
| 8174037 | High efficiency group III nitride LED with lenticular surface A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a len... | 05/08/2012 |
| 8167674 | Phosphor distribution in LED lamps using centrifugal force A method of manufacturing an LED lamp is disclosed. The method includes admixing an uncured curable liquid resin and a phosphor, dispensing the uncured admixture on an LED chip, centrifuging the chip and the admixture to disperse the phosphor particles in the uncure... | 05/01/2012 |
| 8167463 | Power surface mount light emitting die package A light emitting die package includes a substrate, a reflector plate, and a lens. The substrate has traces for connecting an external electrical power source to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and subst... | 05/01/2012 |
| 8163577 | Methods of forming light emitting devices having current reducing structures A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semicon... | 04/24/2012 |
| 8163086 | Halogen assisted physical vapor transport method for silicon carbide growth A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated sili... | 04/24/2012 |
| D658139 | High-density emitter package | 04/24/2012 |
| 8154043 | Packaged light emitting devices Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a firs... | 04/10/2012 |
| 8154039 | High efficiency group III nitride LED with lenticular surface A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geomet... | 04/10/2012 |
| 8153515 | Methods of fabricating strain balanced nitride heterojunction transistors A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such a... | 04/10/2012 |
| 8147991 | One hundred millimeter single crystal silicon carbide wafer A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and th... | 04/03/2012 |
| 8138583 | Diode having reduced on-resistance and associated method of manufacture A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral condu... | 03/20/2012 |
| 8138000 | Methods for forming semiconductor light emitting devices and submounts A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device receive... | 03/20/2012 |
| 8136965 | Light fixtures and lighting devices A lighting device comprises a heat sink, a housing mounted to and/or thermally coupled to the heat sink, a basket assembly attached to the housing, a solid state light emitter thermally coupled to the heat sink, and a baffle assembly attached to the housing. Also, a... | 03/20/2012 |
| D656254 | Lamp | 03/20/2012 |
| D656253 | Lamp | 03/20/2012 |
| 8125137 | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same A multi-chip lighting emitting device (LED) lamp for providing white light includes a submount including first and second die mounting regions thereon. A first LED chip is mounted on the first die mounting region, and a second LED chip is mounted on the second die m... | 02/28/2012 |
| 8124480 | Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on t... | 02/28/2012 |
| 8123384 | Optical elements with internal optical features and methods of fabricating same An optical element, comprising a substrate and at least one optical film. The substrate is at least partially light-transmissive. The optical film comprises at least a first optical feature and is positioned on a contact surface of the substrate. Also, a lighting de... | 02/28/2012 |
| 8123376 | Lighting device and lighting method A lighting device comprising first and second groups of solid state light emitters, which emit light having peak wavelength in ranges of from 430 nm to 480 nm, and first and second groups of lumiphors which emit light having dominant wavelength in the range of from ... | 02/28/2012 |
| 8123375 | Tile for solid state lighting A solid state lighting tile (10) includes a substrate having a planar surface. A first plurality of solid state light emitting devices (LEDs) are on the substrate. The first plurality of LEDs (19) are connected in series to form a first string of LEDs ... | 02/28/2012 |
| 8120240 | Light emission device and method utilizing multiple emitters A light emission device includes multiple electrically activated solid state emitters (e.g., LEDs) having differing spectral output from one another; and/or phosphor material including one or more phosphors arranged to receive spectral output from at least one of th... | 02/21/2012 |
| 8119539 | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature... | 02/21/2012 |
| 8119028 | Cerium and europium doped single crystal phosphors Compounds of Formula I, which include both cerium and europium, may be useful as phosphors in solid state light emitting devices. Light emitting devices including such phosphors may emit warm white light. ... | 02/21/2012 |
| 8118450 | LED lighting fixture A light emitting diode (LED) lighting fixture for achieving a desired illumination pattern includes a support plate and a plurality of panels Connected to the support plate. Each panel has an array of LEDs mounted to a planar surface thereof, and each of the panels ... | 02/21/2012 |
| 8115419 | Lighting control device for controlling dimming, lighting device including a control device, and method of controlling lighting A lighting control circuit comprises a dimming level detection circuit, a waveform generator and a comparator circuit. The dimming level detection circuit is configurable to generate a first voltage level signal corresponding to a selected one of at least two differ... | 02/14/2012 |
| 8113687 | Modular LED lighting fixture A modular LED lighting fixture is provided, where the shape and brightness of light output from the fixture can be altered by changing LED modules and/or power supplies powering the modules within the fixture. The fixture can include a housing, a modular, removable ... | 02/14/2012 |
| 8112921 | Sign and method for lighting A sign comprising a surface having a display, and a plurality of sources of visible light. The sources of visible light are oriented to illuminate at least a portion of the display, and include solid state light emitters and/or luminescent materials. Line segments d... | 02/14/2012 |
| 8105889 | Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions Methods of forming Group III-nitride transistor device include forming a protective layer on a Group III-nitride semiconductor layer, forming a via hole through the protective layer to expose a portion of the Group III-nitride semiconductor layer, and forming a mask... | 01/31/2012 |
| D653366 | LED lamp | 01/31/2012 |
| D653365 | LED lamp | 01/31/2012 |
| 8101961 | Transparent ohmic contacts on light emitting diodes with growth substrates A light emitting diode is disclosed that includes a growth substrate, a substantially transparent ohmic contact on a first surface of the growth substrate, a Group III nitride, light-emitting active region on a second surface of the growth substrate, a p-type Group ... | 01/24/2012 |
| 8101443 | LEDs using single crystalline phosphor and methods of fabricating same Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at... | 01/24/2012 |
