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| Number | Title | Issue Date |
| 8168372 | Method of creating photolithographic structures with developer-trimmed hard mask Novel, developer-soluble, hard mask compositions and methods of using those compositions to form microelectronic structures are provided. The composition comprises the compound a compound for controlling development rate, a... | 05/01/2012 |
| 8133659 | On-track process for patterning hardmask by multiple dark field exposures This invention provides methods of creating via or trench structures on a developer-soluble hardmask layer using a multiple exposure-development process. The hardmask layer is patterned while the imaging layer is developed. After the imaging layer is stripped using ... | 03/13/2012 |
| 8092628 | Cyclic olefin compositions for temporary wafer bonding New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to as... | 01/10/2012 |
| 7998318 | Crosslinkable fill compositions for uniformly protecting via and contact holes A via and contact hole fill composition and method for using the composition in the dual damascene production of circuits is provided. Broadly, the fill compositions include a quantity of solid components including a polymer binder and a solvent system for the solid... | 08/16/2011 |
| 7976894 | Materials with thermally reversible curing mechanism Novel materials with thermally reversible curing mechanisms are provided. These inventive compositions are useful in forming microelectronic structures, such as dual damascene structures. The compositions comprise a crosslinkable polymer dispersed or dissolved in a ... | 07/12/2011 |
| 7939244 | Photosensitive hardmask for microlithography New hardmask compositions comprising non-polymeric, metal-containing nanoparticles dispersed or dissolved in a solvent system and methods of using those compositions as hardmask layers in microelectronic structures are provided. The compositions are photosensitive a... | 05/10/2011 |
| 7935780 | High-temperature spin-on temporary bonding compositions New compositions and methods of using those compositions as bonding compositions are provided. The compositions are preferably thermoplastic and comprise imides, amideimides, and/or amideimide-siloxanes (either in polymeric or oligomeric form) dispersed or dissolved... | 05/03/2011 |
| 7914974 | Anti-reflective imaging layer for multiple patterning process Novel methods of double patterning a photosensitive resin composition are provided. The methods involve applying the photosensitive composition to a substrate and thermally crosslinking the composition. The crosslinked layer can be used to provide reflection control... | 03/29/2011 |
| 7833692 | Amine-arresting additives for materials used in photolithographic processes Novel, poison-blocking compositions and methods of using those compositions to form poison-blocking layers are provided. The compositions comprise a typical composition used in microlithographic processes, but with a poison-blocking additive included in that composi... | 11/16/2010 |
| 7803458 | Hybrid organic-inorganic polymer coatings with high refractive indices Novel compositions and methods of using those compositions to form metal oxide films or coatings are provided. The compositions comprise an organometallic oligomer and an organic polymer or oligomer dispersed or dissolved in a solvent system. The compositions have l... | 09/28/2010 |
| 7790231 | Automated process and apparatus for planarization of topographical surfaces An improved apparatus (20) and method are provided for effective, high speed contact planarization of coated curable substrates such as microelectronic devices to achieve very high degrees of planarization. The apparatus (20) includes a planarizing uni... | 09/07/2010 |
| 7775785 | Contact planarization apparatus A contact planarization apparatus includes a lower membrane assembly, an upper membrane assembly, a differential pressure assembly, and a curing or reflowing assembly. The lower membrane assembly supports a substrate to be planarized and biases it toward the upper m... | 08/17/2010 |
| 7758913 | Spin-on protective coatings for wet-etch processing of microelectronic substrates New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably compri... | 07/20/2010 |
| 7754818 | Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The in... | 07/13/2010 |
| 7745540 | Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The in... | 06/29/2010 |
| 7713835 | Thermally decomposable spin-on bonding compositions for temporary wafer bonding New spin-on, bonding compositions and methods of using those compositions are provided. The cured bonding compositions comprise a crosslinked oxazoline (either crosslinked with another oxazoline or with a crosslinking agent), and can be used to bond an active wafer ... | 05/11/2010 |
| 7709178 | Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an ac... | 05/04/2010 |
| 7695890 | Negative photoresist for silicon KOH etch without silicon nitride New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, ... | 04/13/2010 |
| 7678861 | Thermal- and chemical-resistant acid protection coating material and spin-on thermoplastic adhesive New compositions for use as protective coatings and/or adhesives are provided. The compositions comprise a hydrocarbon resin (e.g., terpene rosin) and a rubber (e.g., EPDM) dispersed or dissolved in a solvent system. The solvent system is preferably a single-solvent... | 03/16/2010 |
| RE41128 | Organic anti-reflective coating compositions for advanced microlithography New polymers and new anti-reflective compositions containing such polymers are provided. The compositions comprise a polymer (e.g., epoxy cresol novolac resins) bonded with a chromophore (4-hydroxybenzoic acid, trimellitic anhydride). The inventive compositions can ... | 02/16/2010 |
| 7608380 | Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers are copolymers of a compound having the formul... | 10/27/2009 |
| 7608342 | Photocurable, conductive, transparent polymer coatings Photocurable, conductive, and transparent polymer coating compositions and methods of using the same are provided. The compositions include a photopolymer and an electrically conductive polymer dissolved or dispersed in a solvent system. Preferred photopolymers incl... | 10/27/2009 |
| 7602066 | Method of filling structures for forming via-first dual damascene interconnects A method of forming via-first, dual damascene interconnect structures by using a gap-filling, bottom anti-reflective coating material whose thickness is easily controlled by a solvent is provided. After application to a substrate, the bottom anti-reflective coating ... | 10/13/2009 |
| 7601483 | Anti-reflective coatings using vinyl ether crosslinkers Novel, wet developable anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker and a photo... | 10/13/2009 |
| RE40920 | Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. T... | 09/22/2009 |
| 7579044 | Process and device for coating the outer edge of a substrate during microelectronics manufacture New baffles and methods of using these baffles are provided. The baffles comprise a body having an edge wall configured to direct the flow of a composition against a substrate (e.g., silicon wafer) edge. The edge wall comprises a vertical surface, a curved sidewall ... | 08/25/2009 |
| 7507783 | Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process New lithographic compositions (e.g., for use as middle layers in trilayer processes) are provided. In one embodiment, the compositions comprise an organo-silicon polymer dispersed or dissolved in a solvent system, and preferably a crosslinking agent and a catalyst. ... | 03/24/2009 |
| 7455955 | Planarization method for multi-layer lithography processing The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or therm... | 11/25/2008 |
| 7449230 | Lithography pattern shrink process and articles Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus... | 11/11/2008 |
| 7364835 | Developer-soluble materials and methods of using the same in via-first dual damascene applications Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflectiv... | 04/29/2008 |
| 7364832 | Wet developable hard mask in conjunction with thin photoresist for micro photolithography A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion e... | 04/29/2008 |
| 7348281 | Method of filling structures for forming via-first dual damascene interconnects A method of forming via-first, dual damascene interconnect structures by using a gap-filling, bottom anti-reflective coating material whose thickness is easily controlled by a solvent is provided. After application to a substrate, the bottom anti-reflective coating ... | 03/25/2008 |
| 7323289 | Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties Novel anti-reflective coatings comprising small molecules (e.g., less than about 5,000 g/mole) in lieu of high molecular weight polymers and methods of using those coatings are provided. In one embodiment, aromatic carboxylic acids are used as the chromophores, and ... | 01/29/2008 |
| 7316844 | Spin-on protective coatings for wet-etch processing of microelectronic substrates New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably compri... | 01/08/2008 |
| 7261997 | Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment the polymers of the composition include recurring monomers h... | 08/28/2007 |
| 7192999 | Polyimides for use as high refractive index, thin film materials New compositions for use as high refractive index layers are provided. The compositions comprise a polyimide dispersed or dissolved in a solvent system. The polyimide can be prepared from commercially available dianhydrides and diamines. Preferred polymer include re... | 03/20/2007 |
| 7132216 | Non-aromatic chromophores for use in polymer anti-reflective coatings An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as botto... | 11/07/2006 |
| 7132219 | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most... | 11/07/2006 |
| 7122296 | Lithography pattern shrink process and articles Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus... | 10/17/2006 |
| 7108958 | Photosensitive bottom anti-reflective coatings Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. Preferred polymers include polycarbonates, polysulfonyl esters, polycarbonate sulfones... | 09/19/2006 |
