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| Number | Title | Issue Date |
| 8168941 | Ion beam angle calibration and emittance measurement system for ribbon beams An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam... | 05/01/2012 |
| 8119413 | Method and system for detection of solid materials in a plasma using an electromagnetic circuit A method for solid material detection in a medium includes receiving an exhaust gas downstream with respect to a workpiece from which a photoresist material is removed. An electromagnetic circuit is configured to include the exhaust gas, the exhaust gas is excited w... | 02/21/2012 |
| 8089052 | Ion source with adjustable aperture An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber ho... | 01/03/2012 |
| 8071964 | System and method of performing uniform dose implantation under adverse conditions An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon s... | 12/06/2011 |
| 8071451 | Method of doping semiconductors A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a se... | 12/06/2011 |
| 8035080 | Method and system for increasing beam current above a maximum energy for a charge state Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first p... | 10/11/2011 |
| 8023247 | Electrostatic chuck with compliant coat The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particul... | 09/20/2011 |
| 8008636 | Ion implantation with diminished scanning field effects Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to im... | 08/30/2011 |
| 7994488 | Low contamination, low energy beamline architecture for high current ion implantation An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at le... | 08/09/2011 |
| 7994487 | Control of particles on semiconductor wafers when implanting boron hydrides A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a... | 08/09/2011 |
| 7982195 | Controlled dose ion implantation An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece wi... | 07/19/2011 |
| 7977628 | System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes An ion implantation system comprising an ion source configured to generate an ion beam along a beam path, a mass analyzer is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion beam and a beam complementar... | 07/12/2011 |
| 7973290 | System and method of beam energy identification for single wafer ion implantation The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam in... | 07/05/2011 |
| 7952851 | Wafer grounding method for electrostatic clamps An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workp... | 05/31/2011 |
| 7949425 | High throughput wafer notch aligner An ion implantation apparatus, system, and method are provided for a transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportat... | 05/24/2011 |
| 7947966 | Double plasma ion source An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, ... | 05/24/2011 |
| 7915597 | Extraction electrode system for high current ion implanter A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a supp... | 03/29/2011 |
| 7897944 | Method and apparatus for measurement of beam angle in ion implantation An ion beam angle detection apparatus, comprising a linear drive assembly fixedly attached to a moveable profiler assembly, wherein the profiler assembly comprises, a profiler having a profiler aperture formed within a profiler top plate and a profiler sensor assemb... | 03/01/2011 |
| 7845310 | Wide area radio frequency plasma apparatus for processing multiple substrates An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of e... | 12/07/2010 |
| 7858955 | System and method of controlling broad beam uniformity An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a contr... | 12/28/2010 |
| 7842931 | Extraction electrode manipulator An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other ... | 11/30/2010 |
| 7821655 | In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewi... | 10/26/2010 |
| 7800083 | Plasma electron flood for ion beam implanter A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion i... | 09/21/2010 |
| 7794663 | Method and system for detection of solid materials in a plasma using an electromagnetic circuit A method for solid material detection in a medium includes receiving an exhaust gas downstream with respect to a workpiece from which a photoresist material is removed. An electromagnetic circuit is configured to include the exhaust gas, the exhaust gas is excited w... | 09/14/2010 |
| 7789443 | Workpiece gripping device A gripper for use with a robot includes a support body for removably attaching the gripper to a moveable arm and a workpiece contact body having a groove extending along at least a portion of the contact body for engaging a curved outer edge of the workpiece. A coup... | 09/07/2010 |
| 7759657 | Methods for implanting B22Hx and its ionized lower mass byproducts Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral... | 07/20/2010 |
| 7751172 | Sliding wafer release gripper/wafer peeling gripper The present invention is directed to a system and a method for peeling a wafer off of an electrostatic clamp (ESC). The ESC removal system comprises a electrostatic clamp and a wafer electrically coupled and physically in contact with each other. A plurality of grip... | 07/06/2010 |
| 7750320 | System and method for two-dimensional beam scan across a workpiece of an ion implanter A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be form... | 07/06/2010 |
| 7750314 | Elevated temperature RF ion source An elevated temperature RF ion source system, comprising an ion source body, an RF antenna coil external to the ion source body, a vacuum enclosure surrounding both the outside surface of the ion source body and the RF antenna coil, at least one power supply, a gas ... | 07/06/2010 |
| 7748344 | Segmented resonant antenna for radio frequency inductively coupled plasmas An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially co... | 07/06/2010 |
| 7728293 | Structures and methods for measuring beam angle in an ion implanter The present invention involves an ion beam angular measurement apparatus for providing feedback for a predetermined set ion beam angle comprising an arrangement of composite pillars formed on an insulating material and wherein the composite pillars selectively allow... | 06/01/2010 |
| 7714406 | Low-cost electrostatic clamp with fast de-clamp time A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a sec... | 05/11/2010 |
| 7709814 | Apparatus and process for treating dielectric materials Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module... | 05/04/2010 |
| 7705328 | Broad ribbon beam ion implanter architecture with high mass-energy capability A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perp... | 04/27/2010 |
| 7704872 | Ultraviolet assisted pore sealing of porous low k dielectric films Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surfa... | 04/27/2010 |
| 7701230 | Method and system for ion beam profiling One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also include... | 04/20/2010 |
| 7699574 | Work-piece processing system A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station wit... | 04/20/2010 |
| 7696494 | Beam angle adjustment in ion implanters A steering component is included in an ion implantation system to direct or “steer” an ion beam to a scan vertex of a scanning component downstream of the steering component. In this manner, the scan vertex of the scanning component coincides with the focal poin... | 04/13/2010 |
| 7692164 | Dose uniformity correction technique Non uniform ion implantations in a pendulum type of ion implantation are mitigated by adjusting movement of a wafer according to a corresponding non uniform function. More particularly, a non uniform ion implantation function is obtained by measuring and/or modeling... | 04/06/2010 |
| 7683348 | Sensor for ion implanter A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fr... | 03/23/2010 |
