Did You Know...
...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!
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| Number | Title | Issue Date |
| 7291874 | Laser dicing apparatus for a gallium arsenide wafer and method thereof The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a worki... | 11/06/2007 |
| 7177333 | Laser diode device with an APC inside the cap A laser diode device of package not greater than 5.6 mm, having an automatic power control circuit directly mounted in a heat sink (or a submount) inside the metal cap thereof to substitute for an external circuit board for driving by voltage instead of current.... | 02/13/2007 |
| 7177331 | Laser diode module with a built-in high-frequency modulation IC A laser diode module with a built-in high-frequency modulation IC used to remove the reflected noise generated as the laser beam reads the signal to be played back and directly packaged within a metal cap. The high-frequency modulation IC creates an electrical conne... | 02/13/2007 |
| 7061026 | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO16-2z; 0≦x | 06/13/2006 |
| 7023892 | Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity f... | 04/04/2006 |
| 6753818 | Concealed antenna for mobile communication device A mobile communication device comprises a housing enclosing a circuit board that has components disposed thereon. The housing has opposite first and second surfaces. An antenna element is formed on the first surface of the housing for receiving and/or transmitting e... | 06/22/2004 |
| 6677903 | Mobile communication device having multiple frequency band antenna A mobile communication device comprises an antenna and a housing enclosing a circuit board having communication components disposed thereon to transmit and receive communication signals. The antenna includes a substrate having opposite first and second su... | 01/13/2004 |
| 6614170 | Light emitting diode with light conversion using scattering optical media The invention provides a light emitting diode (LED) or other light emitting means such as a laser diode (LD) comprising a light emitting component and scattering optical media such as dielectric phosphor powder (DPP) which absorb a part of light emitted b... | 09/02/2003 |
| 6395564 | Method for fabricating a light-emitting device with uniform color temperature The invention provides a method for fabricating a light-emitting diode with uniform color temperature, comprising the steps of: forming a plurality of light-emitting diodes on a wafer; obtaining the light emission wavelengths of the light-emitting diodes ... | 05/28/2002 |
| 6344665 | Electrode structure of compound semiconductor device An electrode structure of compound semiconductor device. The compound semiconductor device has a substrate, an n-type layer over entire substrate, a mesa-like p-type layer on partial surface of the n-type layer, a transparent conductive layer on the mesa-... | 02/05/2002 |
| 6303485 | Method of producing gallium nitride-based III-V Group compound semiconductor device The present invention proposes a method of producing a gallium nitride-based III-V Group compound semiconductor device. First, beryllium ions are diffused into the p-type layer of gallium nitride to increase hole mobility. Contacts are then added in subse... | 10/16/2001 |
