Did You Know...
...that the Eveready Battery began as an invention called the "electric flowerpot," which was a tube with a battery and light bulb inside? The idea was to fasten this gizmo to the side of a flowerpot so it would illuminate the flowers from the bottom. The idea died on the vine and the businessman who licensed the flower pot, Conrad Huber, was left with a pile of useless tubes -- until he found a way to market them as batteries to light the world!
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| Number | Title | Issue Date |
| 8152927 | CVD coating device The invention relates to a method for depositing especially crystalline layers on one or more, especially crystalline substrates in a process chamber by means of reaction gases that are introduced into the process chamber and that undergo especially pyrolitic reacti... | 04/10/2012 |
| 8052796 | CVD reactor comprising a photodiode array The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate... | 11/08/2011 |
| 7762208 | Loading and unloading apparatus for a coating device A device for loading at least one substrate into a process chamber of a coating unit and unloading the at least one substrate therefrom by means of a gripper of a handling machine. The device includes a loading plate which can be gripped by the gripper and embodies ... | 07/27/2010 |
| 7709398 | Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is compris... | 05/04/2010 |
| 7625448 | Inlet system for an MOCVD reactor The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming ... | 12/01/2009 |
| 7524532 | Process for depositing thin layers on a substrate in a process chamber of adjustable height A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber ... | 04/28/2009 |
| 7473316 | Method of growing nitrogenous semiconductor crystal materials What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an e... | 01/06/2009 |
| 7410670 | Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unit The invention relates to a method and device for depositing at least one layer on at least one substrate in a process chamber. Said layer comprises several components and is insulating, passivating or electrically conductive. The components are vaporized in a temper... | 08/12/2008 |
| 7332038 | Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a g... | 02/19/2008 |
| 7294207 | Gas-admission element for CVD processes, and device The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated s... | 11/13/2007 |
| 7282096 | Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps betwe... | 10/16/2007 |
| 7201942 | Coating method A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate sourc... | 04/10/2007 |
| 7147718 | Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they rea... | 12/12/2006 |
| 7135073 | Method and system for semiconductor crystal production with temperature management What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent ele... | 11/14/2006 |
| 7128785 | Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; on... | 10/31/2006 |
| 7128786 | Process for depositing III-V semiconductor layers on a non-III-V substrate This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing silicon. According to said method, a III-V layer, especially a buffer lay... | 10/31/2006 |
| 7078318 | Method for depositing III-V semiconductor layers on a non-III-V substrate The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out th... | 07/18/2006 |
| 7067012 | CVD coating device The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The... | 06/27/2006 |
| 7056388 | Reaction chamber with at least one HF feedthrough A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combina... | 06/06/2006 |
| 7048802 | CVD reactor with graphite-foam insulated, tubular susceptor The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arr... | 05/23/2006 |
| 7033921 | Method and device for depositing crystalline layers on crystalline substrates The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber of a reactor by means ... | 04/25/2006 |
| 6983620 | Method and device for the temperature control of surface temperatures of substrates in a CVD reactor The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or ad... | 01/10/2006 |
| 6972050 | Method for depositing in particular crystalline layers, and device for carrying out the method The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the... | 12/06/2005 |
| 6964876 | Method and device for depositing layers The invention relates to a device comprising a process chamber which is arranged in a reaction housing and which can be heated especially by supplying heat to a substrate holder, comprising a gas inlet for the admission of gaseous starting material, whereby the deco... | 11/15/2005 |
| 6962624 | Method and device for depositing in particular organic layers using organic vapor phase deposition The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in ga... | 11/08/2005 |
| 6932866 | Method for depositing in particular crystalline layers The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled wall. The floor of said process chamber is heated. At least one reaction ... | 08/23/2005 |
| 6908838 | Method and device for treating semiconductor substrates The invention relates to a method and to a device for treating semiconductor substrates. In conventional systems, the especially uncoated semiconductor substrates are fed to a treatment device through a charging sluice, said charging sluice adjoining a transfer cham... | 06/21/2005 |
| 6905548 | Device for the deposition of crystalline layers on crystalline substrates The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from abo... | 06/14/2005 |
| 6899764 | Chemical vapor deposition reactor and process chamber for said reactor A chemical vapor deposition reactor having a process chamber accommodating a substrate holder for wafers, a first gas flow of reactive gases to process the wafers and a crown-shaped gas-collector surrounding the substrate-holder, wherein said reactor further compris... | 05/31/2005 |
| 6811614 | CVD reactor with substrate holder which is rotatably driven and mounted by a gas stream The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably drive... | 11/02/2004 |
| 6786973 | Method for depositing in particular crystalline layers, gas-admission element and device for carrying out the method The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate fr... | 09/07/2004 |
| 6506450 | Reactor for coating flat substrates and process for manufacturing such substrates A reactor for coating flat substrates and particularly wafers is described which has a reaction vessel into which reaction gases can be introduced, and a substrate holder unit in which substrates are held in a holder such that the main surface of the subs... | 01/14/2003 |
| 6279506 | Reactor for coating plane substrates and method for producing said substrates A reactor for coating flat substrates and particularly wafers is described which has a reaction vessel into which reaction gases can be introduced, and a substrate holder unit in which substrates are held in a holder such that the main surface of the substrate... | 08/28/2001 |
