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| Number | Title | Issue Date |
| 8178585 | Solvent-free synthesis of soluble nanocrystals Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents. | 05/15/2012 |
| 8168811 | Precursors for CVD/ALD of metal-containing films Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): | 05/01/2012 |
| 8153833 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N... | 04/10/2012 |
| 8153434 | Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness and method of making same A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character,... | 04/10/2012 |
| 8150549 | Liquid handling system with electronic information storage An electronic storage device is coupled with a container capable of holding liquid for electronically storing information relating to the liquid stored in the container. The system can be configured with an antenna, for storing information to and reading information... | 04/03/2012 |
| 8138071 | Isotopically-enriched boron-containing compounds, and methods of making and using same An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentrat... | 03/20/2012 |
| 8128073 | Method and apparatus to help promote contact of gas with vaporized material Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disp... | 03/06/2012 |
| 8114220 | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and o... | 02/14/2012 |
| 8109130 | Apparatus and process for sensing fluoro species in semiconductor processing systems A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a ... | 02/07/2012 |
| 8093140 | Amorphous Ge/Te deposition process Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous ... | 01/10/2012 |
| 8062965 | Isotopically-enriched boron-containing compounds, and methods of making and using same An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentrat... | 11/22/2011 |
| 8058219 | Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least ... | 11/15/2011 |
| 8053375 | Super-dry reagent compositions for formation of ultra low k films An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/o... | 11/08/2011 |
| 8034407 | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium uppe... | 10/11/2011 |
| 8026200 | Low pH mixtures for the removal of high density implanted resist A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively ... | 09/27/2011 |
| 8008117 | Antimony and germanium complexes useful for CVD/ALD of metal thin films Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactur... | 08/30/2011 |
| 8003391 | Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness, and method of making same A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character,... | 08/23/2011 |
| 8002880 | Gas storage and dispensing system with monolithic carbon adsorbent A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at... | 08/23/2011 |
| 7994108 | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one al... | 08/09/2011 |
| 7972421 | Rectangular parallelepiped fluid storage and dispensing vessel A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scr... | 07/05/2011 |
| 7966879 | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel A monitoring system (100) for monitoring fluid in a fluid supply vessel (22, 24, 26, 28, 108) during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors (114, 126) for moni... | 06/28/2011 |
| 7964746 | Copper precursors for CVD/ALD/digital CVD of copper metal films Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cycl... | 06/21/2011 |
| 7960328 | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achiev... | 06/14/2011 |
| 7955797 | Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fl... | 06/07/2011 |
| 7951225 | Fluid storage and dispensing systems, and fluid supply processes comprising same Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and i... | 05/31/2011 |
| 7943204 | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-co... | 05/17/2011 |
| 7931713 | Chemical mechanical planarization pad A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarization characteristics throughout planarization applications. Shearing, hardness, wearing, w... | 04/26/2011 |
| 7925450 | Photometrically modulated delivery of reagents A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to respons... | 04/12/2011 |
| 7923423 | Compositions for processing of semiconductor substrates Compositions useful in semiconductor manufacturing for surface preparation and/or cleaning of wafer substrates such as semiconductor device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further proce... | 04/12/2011 |
| 7922824 | Oxidizing aqueous cleaner for the removal of post-etch residues An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least... | 04/12/2011 |
| 7922823 | Compositions for processing of semiconductor substrates Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be fu... | 04/12/2011 |
| 7910765 | Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N... | 03/22/2011 |
| 7888301 | Resist, barc and gap fill material stripping chemical and method An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organ... | 02/15/2011 |
| 7887883 | Composition and method for low temperature deposition of silicon-containing films This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., | 02/15/2011 |
| 7863203 | Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., | 01/04/2011 |
| 7862857 | Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, ... | 01/04/2011 |
| 7862646 | Nanoporous articles and methods of making same An adsorbent having porosity expanded by contact with a first agent effecting such expansion and a pressurized second agent effecting transport of the first agent into the porosity, wherein the adsorbent subsequent to removal of the first and second agents retains e... | 01/04/2011 |
| 7858816 | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta0thin films Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including ... | 12/28/2010 |
| 7857880 | Semiconductor manufacturing facility utilizing exhaust recirculation A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exha... | 12/28/2010 |
| 7838329 | Antimony and germanium complexes useful for CVD/ALD of metal thin films Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactur... | 11/23/2010 |
