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| Number | Title | Issue Date |
| 7329583 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 02/12/2008 |
| 7282412 | Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described... | 10/16/2007 |
| 7279399 | Method of forming isolated pocket in a semiconductor substrate A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 10/09/2007 |
| 7276431 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 10/02/2007 |
| 7276411 | Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described... | 10/02/2007 |
| 7265434 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 09/04/2007 |
| 7238568 | Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described... | 07/03/2007 |
| 7215186 | Method for operational amplifier sharing between channels A multi-channel current regulator includes two or more channels, each channel acting as a current source or sink for a respective load. Each channel regulates its load current so that the load current is proportional to an input voltage supplied to the channel. An o... | 05/08/2007 |
| 7211863 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 05/01/2007 |
| 7202536 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 04/10/2007 |
| 7176548 | Complementary analog bipolar transistors with trench-constrained isolation diffusion A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices ... | 02/13/2007 |
| 7080266 | Single wire network for sending data in predetermined periods and next register address immediately thereafter and storing data in register identified in last cycle A device control protocol (and related implementation) is provided to control power ICs and other devices. For this protocol, a master device communicates with a slave device using a single wire. The device control protocol distinguishes between different types of i... | 07/18/2006 |
