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...that Kleenex tissue was originally designed to be a gas mask filter? It was developed at the beginning of World War I to replace cotton, which was then in short supply as a surgical dressing.
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| Number | Title | Issue Date |
| 8003486 | Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layer The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the act... | 08/23/2011 |
| 7902029 | Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor Processes for forming self-aligned, deposited source/drain, insulated gate, transistors and, in particular, FETs. By depositing a source/drain in a recess such that it remains only in the recess, the source/drain can be formed self-aligned to a gate and/or a channel... | 03/08/2011 |
| 7884003 | Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow ... | 02/08/2011 |
| 7883980 | Insulated gate field effect transistor having passivated schottky barriers to the channel A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to form a channel-interface layer-s... | 02/08/2011 |
| 7851325 | Strained semiconductor using elastic edge relaxation, a buried stressor layer and a sacrificial stressor layer The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the act... | 12/14/2010 |
| 7816240 | Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal. ... | 10/19/2010 |
| 7756196 | Efficient adaptive filters for CDMA wireless systems A CDMA radio system uses an adaptive filter in a receiver to mitigate multipath radio propagation and to filter out interfering signals. Characteristics of an initial stage of the filter preferably are determined by cross correlation of a generated pilot signal and ... | 07/13/2010 |
| 7700416 | Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer The process uses a sacrificial stressor layer to provide tensile strained surface regions for bulk silicon or silicon on insulator (SOI) substrates. The process deposits a sacrificial layer of silicon germanium on the surface of the substrate and then patterns the w... | 04/20/2010 |
| 7639738 | Efficient channel shortening in communication systems A communication system includes a channel shortening filter to reduce intersymbol interference and facilitate recovery of communications. The channel shortening filter preferably includes a energy concentration filter that optimizes SNR or SINR or other performance ... | 12/29/2009 |
| 7615402 | Electrostatically operated tunneling transistor A transistor operated by changing the electrostatic potential of an island disposed between two tunnel junctions. The transistor has an island of material which has a band gap (e.g. semiconductor material). Source and drain contacts are provided. The transistor has ... | 11/10/2009 |
| 7612365 | Strained silicon with elastic edge relaxation A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thickness... | 11/03/2009 |
| 7599426 | Use of adaptive filters in multiple access wireless systems employing predictable signals A code division multiple access (CDMA) radio system uses an adaptive filter in a receiver to mitigate multipath radio propagation and to filter out interfering signals. Characteristics of an initial stage of the filter preferably are determined by cross correlation ... | 10/06/2009 |
| 7462860 | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow ... | 12/09/2008 |
