Assignee: ASM Japan K.K.

Location: Tokyo, JP
No. of patents: 130

Number	Title	Issue Date
8173554	Method of depositing dielectric film having Si-N bonds by modified peald method A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semi...	05/08/2012
8142862	Method of forming conformal dielectric film having Si-N bonds by PECVD A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space ins...	03/27/2012
8129291	Method of depositing dielectric film having Si-N bonds by modified peald method A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semi...	03/06/2012
8118940	Clamping mechanism for semiconductor device A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring porti...	02/21/2012
8084104	Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal ...	12/27/2011
8080282	Method for forming silicon carbide film containing oxygen A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in i...	12/20/2011
8053036	Method for designing shower plate for plasma CVD apparatus A method of designing a shower plate for a plasma CVD apparatus includes (a) providing a shower plate having a convex surface configured by a convex equation; (b) forming a film on a wafer using the shower plate in the plasma CVD apparatus; (c) determining a distrib...	11/08/2011
8021723	Method of plasma treatment using amplitude-modulated RF power A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i)...	09/20/2011
8003174	Method for forming dielectric film using siloxane-silazane mixture A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane...	08/23/2011
7993462	Substrate-supporting device having continuous concavity A substrate-supporting device has a top surface for placing a substrate thereon composed of a plurality of surfaces separated from each other and defined by a continuous concavity being in gas communication with at least one through-hole passing through the substrat...	08/09/2011
D643055	Heater block for use in a semiconductor processing tool	08/09/2011
7972980	Method of forming conformal dielectric film having Si-N bonds by PECVD A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside w...	07/05/2011
7972961	Purge step-controlled sequence of processing semiconductor wafers A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the tra...	07/05/2011
7963736	Wafer processing apparatus with wafer alignment device A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially ...	06/21/2011
7955650	Method for forming dielectric film using porogen gas A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increa...	06/07/2011
7945345	Semiconductor manufacturing apparatus A semiconductor manufacturing apparatus includes a first program on a controller and a second program on an interface board between the controller and controlled devices. Both of the programs update their own counters and exchange their counter values with each othe...	05/17/2011
7919416	Method of forming conformal dielectric film having Si-N bonds by PECVD A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space ins...	04/05/2011
7899557	Input signal analyzing system and control apparatus using same For example, by providing MMF software 10, 11 transferring data using a memory-mapped file respectively in a semiconductor manufacturing apparatus 1 and in an input signal analyzing system 8, data transfer load placed on control software 4	03/01/2011
7842622	Method of forming highly conformal amorphous carbon layer A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside ...	11/30/2010
7833353	Liquid material vaporization apparatus for semiconductor processing apparatus A liquid material vaporization apparatus for a semiconductor processing apparatus includes: a vaporization tank; an inner partition wall disposed in the tank for dividing the interior of the tank into a charging compartment and a vaporization compartment which are l...	11/16/2010
7832353	Semiconductor manufacturing apparatus equipped with wafer inspection device and inspection techniques A semiconductor manufacturing apparatus includes a processing unit for processing at least one wafer; a loading/unloading unit for loading/unloading at least wafer; an input/output chamber for taking in a processed wafer from the processing unit and taking out the p...	11/16/2010
7831315	Method for controlling semiconductor-processing apparatus A method controls an apparatus such as a semiconductor-processing apparatus including a controller and at least one device controlled by the controller, wherein the controller is provided with an interface for communicating with the device, and the interface has an ...	11/09/2010
7829159	Method of forming organosilicon oxide film and multilayer resist structure A method of forming an organosilicon oxide film by plasma CVD includes: (i) adjusting a temperature of a susceptor on which a substrate is placed to lower than 300° C.; (ii) introducing at least tetraethylorthosilicate (TEOS) and oxygen into a reactor in which the ...	11/09/2010
7825040	Method for depositing flowable material using alkoxysilane or aminosilane precursor A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; ...	11/02/2010
7807566	Method for forming dielectric SiOCH film having chemical stability A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film a...	10/05/2010
7799674	Ruthenium alloy film for copper interconnects A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an ...	09/21/2010
7799134	Shower plate having projections and plasma CVD apparatus using same A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With pr...	09/21/2010
7785658	Method for forming metal wiring structure A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insu...	08/31/2010
7781352	Method for forming inorganic silazane-based dielectric film A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. t...	08/24/2010
7763869	UV light irradiating apparatus with liquid filter A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on t...	07/27/2010
7718553	Method for forming insulation film having high density A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond ...	05/18/2010
7718544	Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient A method for fabricating a semiconductor device includes: forming on a substrate a silicon-containing insulation film having a diffusion coefficient of about 250 μm2/min or less as measured using isopropyl alcohol, by plasma reaction using a reaction gas...	05/18/2010
7718004	Gas-introducing system and plasma CVD apparatus A gas-introducing system for plasma CVD and cleaning includes: a showerhead including a top plate with a gas inlet port and a shower plate; a rectifying plate installed in the interior space of the showerhead and dividing the interior space into an upper space and a...	05/18/2010
7712435	Plasma processing apparatus with insulated gas inlet pore A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the re...	05/11/2010
7712370	Method of detecting occurrence of sticking of substrate Sticking of a substrate occurs in a reaction chamber for processing the substrate placed on a surface of a substrate-supporting device provided with lift pins for moving the substrate up and down with respect to the surface of the substrate-supporting device. A meth...	05/11/2010
7691205	Substrate-supporting device A substrate-supporting device for CVD having a substrate-supporting region includes: a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and multiple dimples having bottom surfaces lower than the re...	04/06/2010
7690881	Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus A substrate transfer apparatus for loading and unloading substrates in a reaction chamber, includes: an arm having a distal end which is laterally movable in a straight line direction; and end-effectors for loading and unloading substrates in a reaction chamber, whi...	04/06/2010
7655577	Method of forming silicon-containing insulation film having low dielectric constant and low film stress A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vin...	02/02/2010
7651959	Method for forming silazane-based dielectric film A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a si...	01/26/2010
7641761	Apparatus and method for forming thin film using surface-treated shower plate A plasma CVD apparatus includes a showerhead comprised of a body having a hollow structure. The shower plate is detachably integrated with the body at a peripheral surface of the body and a peripheral surface of the shower plate, and at least one of the peripheral s...	01/05/2010

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Assignee: ASM Japan K.K.