Assignee: ASM International N.V.

Location: NL
No. of patents: 68

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Number	Title	Issue Date
8118941	Semiconductor processing parts having apertures with deposited coatings and methods for forming the same Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part a...	02/21/2012
8034410	Protective inserts to line holes in parts for semiconductor process equipment Inserts are used to line openings in parts that form a semiconductor processing reactor. In some embodiments, the reactor parts delimit a reaction chamber. The reactor parts may be formed of graphite. A layer of silicon carbide is deposited on surfaces of the openin...	10/11/2011
8017182	Method for depositing thin films by mixed pulsed CVD and ALD Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is fo...	09/13/2011
8012876	Delivery of vapor precursor from solid source A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is transformed into a liquid state in the storage container. The liquid state precursor is transported from the s...	09/06/2011
7998883	Process for producing zirconium oxide thin films This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction sp...	08/16/2011
7985669	Selective deposition of noble metal thin films Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a hi...	07/26/2011
7981791	Thin films Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impu...	07/19/2011
7966969	Deposition of TiN films in a batch reactor Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed in...	06/28/2011
7955979	Method of growing electrical conductors A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin fil...	06/07/2011
7927942	Selective silicide process A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then...	04/19/2011
7833906	Titanium silicon nitride deposition Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a...	11/16/2010
7829457	Protection of conductors from oxidation in deposition chambers In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited materia...	11/09/2010
7807222	Semiconductor processing parts having apertures with deposited coatings and methods for forming the same Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part a...	10/05/2010
7754621	Process for producing zirconium oxide thin films This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction spa...	07/13/2010
7754013	Apparatus and method for atomic layer deposition on substrates A deposition station allows atomic layer deposition (ALD) of films onto a substrate. The station comprises an upper and a lower substantially flat part between which a substrate is accommodated. The parts are positioned opposite each other and parallel to the substr...	07/13/2010
7749918	Method and apparatus for processing semiconductor substrates Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chambe...	07/06/2010
7740437	Processing system with increased cassette storage capacity A system for processing semiconductor substrates includes a front-end with at least two vertical levels of input/output ports for transferring substrate cassettes into or out of the housing of the processing system. The front-end also includes at least one level of ...	06/22/2010
7732350	Chemical vapor deposition of TiN films in a batch reactor Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed in...	06/08/2010
7732331	Copper interconnect structure having stuffed diffusion barrier The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al int...	06/08/2010
7718518	Low temperature doped silicon layer formation A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be fl...	05/18/2010
7691757	Deposition of complex nitride films Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor puls...	04/06/2010
7691750	Methods of forming films in semiconductor devices with solid state reactants A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket m...	04/06/2010
7674726	Parts for deposition reactors Processing methods and internal reactor parts avoid peeling and particle generation caused by differences in the coefficients of thermal expansion (CTE's) between reactor parts and films deposited on the reactor parts in hot wall CVD chambers. Conventional materials...	03/09/2010
7670944	Conformal lining layers for damascene metallization Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired linin...	03/02/2010
7651569	Pedestal for furnace A pedestal is provided for supporting wafer boats in a process chamber during semiconductor fabrication. The pedestal contains hollow spaces, such as within porous insulating plugs, and gases inside the pedestal may expand during semiconductor processing. The pedest...	01/26/2010
7629267	High stress nitride film and method for formation thereof A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or dur...	12/08/2009
7629256	In situ silicon and titanium nitride deposition A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processi...	12/08/2009
7618681	Process for producing bismuth-containing oxide films A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the ...	11/17/2009
7601225	System for controlling the sublimation of reactants An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, b...	10/13/2009
7570876	Method and system for loading substrate supports into a substrate holder Wafer supports are provided that have a diameter smaller than the diameter of the wafer that they are to support in a wafer boat. The perimeter of the wafer support is preferably continuous, extending completely around in a 360° span, and is sized to fit between th...	08/04/2009
7553516	System and method of reducing particle contamination of semiconductor substrates Particle contamination of semiconductor substrates due to particles coming off of wafer boat rods is reduced. A gas flow is established with the boat rods downstream of the substrates, to blow particles from the boat rods away from the substrates. The boat rods can ...	06/30/2009
7491634	Methods for forming roughened surfaces and applications thereof Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form d...	02/17/2009
7419903	Thin films Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impu...	09/02/2008
7410666	Metal nitride carbide deposition by ALD The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemi...	08/12/2008
7410355	Method for the heat treatment of substrates A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surface...	08/12/2008
7351293	Method and device for rotating a wafer Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer ...	04/01/2008
7351057	Door plate for furnace The process chamber of a vertical furnace is provided with a closure, or door, comprising an upper and a lower door plate. The upper door plate has a gas exhaust opening proximate its center, thereby allowing for a symmetrical flow of process gases through the proce...	04/01/2008
7323422	Dielectric layers and methods of forming the same High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or ...	01/29/2008
7312156	Method and apparatus for supporting a semiconductor wafer during processing A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas ...	12/25/2007
7294582	Low temperature silicon compound deposition Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using...	11/13/2007

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Assignee: ASM International N.V.