Assignee: ASM America, Inc.

Location: Phoenix, AZ
No. of patents: 222

Number	Title	Issue Date
8137462	Precursor delivery system A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve...	03/20/2012
8100583	Thermocouple A thermocouple having at least one inner alignment feature or at least one outer alignment feature, or a combination thereof for positively positioning and aligning at least one thermocouple junction within a bore formed in a susceptor ring of a semiconductor substr...	01/24/2012
8088225	Substrate support system for reduced autodoping and backside deposition A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate ...	01/03/2012
8088223	System for control of gas injectors A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps.	01/03/2012
8076237	Method and apparatus for 3D interconnect The present invention discloses methods for depositing a material, particularly a conductive material, in cavities of a substrate and forming bonding contacts or pads thereon. An intracavity structure may be utilized in conjunction with embodiments of the present in...	12/13/2011
8071452	Atomic layer deposition of hafnium lanthanum oxides There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a subs...	12/06/2011
8067297	Process for deposition of semiconductor films Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional c...	11/29/2011
8067061	Reaction apparatus having multiple adjustable exhaust ports A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports select...	11/29/2011
8047706	Calibration of temperature control system for semiconductor processing chamber Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperat...	11/01/2011
7993057	Redundant temperature sensor for semiconductor processing chambers Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substra...	08/09/2011
7972977	ALD of metal silicate films Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is th...	07/05/2011
7946762	Thermocouple A thermocouple for use in a semiconductor processing reactor is described. The thermocouple includes a sheath having a measuring tip at one end and an opening at the other end. A support member having bores formed along the length is disposed within the sheath. A pa...	05/24/2011
7939447	Inhibitors for selective deposition of silicon containing films A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for...	05/10/2011
7921805	Deposition from liquid sources A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid tr...	04/12/2011
7918938	High temperature ALD inlet manifold A system and method for distributing one or more gases to an atomic layer deposition (ALD) reactor. An integrated inlet manifold block mounted over a showerhead assembly includes high temperature (up to 200° C.) rated valves mounted directly thereto, and short, eas...	04/05/2011
7914847	Reactor surface passivation through chemical deactivation Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on t...	03/29/2011
7901968	Heteroepitaxial deposition over an oxidized surface Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the presence of oxygen between a single crystal structure and a SiGe heteroepit...	03/08/2011
7897491	Separate injection of reactive species in selective formation of films Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include...	03/01/2011
7893433	Thin films and methods of making them Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 Å or less, a surface rou...	02/22/2011
7874726	Thermocouple A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing ...	01/25/2011
7871937	Process and apparatus for treating wafers Methods and systems are provided for low pressure baking to remove impurities from a semiconductor surface prior to deposition. Advantageously, the short, low temperature processes consume only a small portion of the thermal budget, while still proving effective at ...	01/18/2011
7863163	Epitaxial deposition of doped semiconductor materials A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a f...	01/04/2011
7837795	Low temperature load and bake Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very little of the thermal budget, such that the process is suitable for a...	11/23/2010
7825401	Strained layers within semiconductor buffer structures A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method of manufacturing the same. The a...	11/02/2010
7799135	Reactor surface passivation through chemical deactivation Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on t...	09/21/2010
7790556	Integration of high k gate dielectric Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-...	09/07/2010
7785995	Semiconductor buffer structures Pile ups of threading dislocations in thick graded buffer layer are reduced by enhancing dislocation gliding. During formation of a graded SiGe buffer layer, deposition of SiGe from a silicon precursor and a germanium precursor is interrupted one or more times with ...	08/31/2010
7772097	Methods of selectively depositing silicon-containing films An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from t...	08/10/2010
7759199	Stressor for engineered strain on channel A semiconductor substrate having recesses filled with heteroepitaxial silicon-containing material with different portions having different impurity concentrations. Strained layers can fill recessed source/drain regions in a graded, bottom-up fashion. Layers can also...	07/20/2010
7727864	Controlled composition using plasma-enhanced atomic layer deposition Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the f...	06/01/2010
7725012	Movable radiant heat sources A semiconductor processing apparatus including a processing chamber and a plurality of radiant heat sources. The radiant heat sources heat a workpiece within the chamber. At least one of the radiant heat sources is movable during processing in an oscillatory motion ...	05/25/2010
7713874	Periodic plasma annealing in an ALD-type process Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited...	05/11/2010
D614153	Reactant source vessel	04/20/2010
7687383	Methods of depositing electrically active doped crystalline Si-containing films Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including cryst...	03/30/2010
7682947	Epitaxial semiconductor deposition methods and structures Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-f...	03/23/2010
7666799	Epitaxial growth of relaxed silicon germanium layers A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium la...	02/23/2010
7666474	Plasma-enhanced pulsed deposition of metal carbide films Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide f...	02/23/2010
7655543	Separate injection of reactive species in selective formation of films Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include...	02/02/2010
7655093	Wafer support system A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess...	02/02/2010
7651953	Method to form ultra high quality silicon-containing compound layers Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon p...	01/26/2010

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Assignee: ASM America, Inc.