Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 7735052 | Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not onl... | 06/08/2010 |
| RE40084 | Optical proximity correction Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0 | 02/19/2008 |
| 6670081 | Optical proximity correction method utilizing serifs having variable dimensions A method of forming a mask for optically transferring a lithographic pattern onto a substrate by use of an optical exposure tool, where the pattern comprises a plurality of features each of which has corresponding edges and vertices. The method includes t... | 12/30/2003 |
| 6623895 | Hybrid phase-shift mask A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least o... | 09/23/2003 |
| 6541167 | Optical proximity correction Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifte... | 04/01/2003 |
| 6482555 | Method of patterning sub-0.25λ line features with high transmission, "attenuated" phase shift masks A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing... | 11/19/2002 |
| 6335130 | System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strong shifted,... | 01/01/2002 |
| 6312854 | Method of patterning sub-0.25 lambda line features with high transmission, "attenuated" phase shift masks A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing... | 11/06/2001 |
| 6114071 | Method of fine feature edge tuning with optically-halftoned mask A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to e... | 09/05/2000 |
