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| Number | Title | Issue Date |
| 6885048 | Transistor-type ferroelectric nonvolatile memory element A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor has a constitution in which the MFM (metal-ferroelectric-metal) struc... | 04/26/2005 |
| 6750501 | Transistor type ferroelectric body nonvolatile storage element A ferroelectric body transistor having a structure of MFMIS (conductor film) -ferroelectric film-conductor film-insulating film-semiconductor) including a gate insulator capacitor having an MIS structure, a low dielectric constant layer restraining layer interposed ... | 06/15/2004 |
| 6084260 | Semiconductor storage device and method for manufacturing the same An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an i... | 07/04/2000 |
| 5955755 | Semiconductor storage device and method for manufacturing the same An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an i... | 09/21/1999 |
| 5674563 | Method for ferroelectric thin film production A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to pro... | 10/07/1997 |
