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| Number | Title | Issue Date |
| 6464793 | Semiconductor crystal growth apparatus A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial... | 10/15/2002 |
| 6334901 | Apparatus for forming semiconductor crystal In a semiconductor crystal growth apparatus, a substrate is heated in a growth vessel evacuated to a ultrahigh vacuum, and gas containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from e... | 01/01/2002 |
| 5693139 | Growth of doped semiconductor monolayers A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas intr... | 12/02/1997 |
| 5254207 | Method of epitaxially growing semiconductor crystal using light as a detector Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the... | 10/19/1993 |
| 4684966 | Static induction transistor photodetector having a deep shielding gate region A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a ver... | 08/04/1987 |
| 4389256 | Method of manufacturing pn junction in group II-VI compound semiconductor A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming the... | 06/21/1983 |
