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| Application No. | Application Title | Issue Date |
| 20120026593 | MICROLENS ARRAY MANUFACTURING METHOD, AND MICROLENS ARRAY There is provided a manufacturing method for a microlens array including a multiple number of microlenses protruded in a substantially hemispherical shape from a surface. The manufacturing method includes forming a resist layer for forming a shape of the microlenses on ... | 02/02/2012 |
| 20110264250 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM STORING PROGRAM A substrate processing system includes a controller that outputs a control signal for controlling a substrate processing apparatus; and a software interlock component that outputs an interlock signal if a predetermined interlock condition is satisfied. In the substrate ... | 10/27/2011 |
| 20110259523 | PLASMA PROCESSING APPARATUS A microwave plasma processing apparatus includes a processing chamber; a microwave source that outputs a microwave; a dielectric plate that radiates the microwave output from the microwave source to the inside of the processing chamber; and a metal electrode provided on... | 10/27/2011 |
| 20110259521 | SUBSTRATE TREATMENT APPARATUS The density of a treatment fluid in exhaust gas is reduced, the amount of the treatment fluid that flows into exhausting equipment connected to a substrate treatment apparatus is reduced, and a load on the exhausting equipment is reduced. A substrate treatment apparatus... | 10/27/2011 |
| 20120003842 | METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber 32 while maintaining a surface temperatu... | 01/05/2012 |
| 20110318919 | SURFACE TREATMENT FOR A FLUOROCARBON FILM A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by ... | 12/29/2011 |
| 20110247560 | SUBSTRATE PROCESSING APPARATUS A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in ord... | 10/13/2011 |
| 20110240598 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD A plasma processing apparatus 11 includes a reactant gas supply unit 13 for supplying a reactant gas for a plasma process into a processing chamber 12. The reactant gas supply unit 13 includes a first reactant gas supply unit 61 provid... | 10/06/2011 |
| 20110240223 | SUBSTRATE PROCESSING SYSTEM There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput... | 10/06/2011 |
| 20110104901 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD A semiconductor device manufacturing method includes a process of forming a first organic film pattern on a to-be-etched layer on a substrate, a process of forming a silicon oxide film coating the first organic film pattern in an isotropic manner, a process of etching t... | 05/05/2011 |
| 20110015774 | CONTROL DEVICE AND CONTROL METHOD A control device includes a storage unit that stores therein first position information indicating relative positions between one reference processing unit selected from a plurality of processing units and the other non-reference processing units; a first calculation un... | 01/20/2011 |
| 20100323531 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the s... | 12/23/2010 |
| 20100323108 | DEPOSITION APPARATUS AND DEPOSITION METHOD A disclosed deposition apparatus includes a catalyst reaction apparatus including an introduction part that introduces a first source gas, a catalyst container that contains a catalyst that produces reactive gas from the first source gas introduced from the introduction... | 12/23/2010 |
| 20100304561 | FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated wi... | 12/02/2010 |
| 20100279014 | VACUUM PROCESSING APPARATUS, VACUUM PROCESSING METHOD, AND COMPUTER READABLE STORAGE MEDIUM A disclosed vacuum processing apparatus comprises a preliminary vacuum chamber whose inner pressure is switchable between a normal pressure and a reduced pressure, wherein a substrate is transferred to or from the preliminary vacuum chamber; plural vacuum processing cha... | 11/04/2010 |
| 20100247805 | METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized... | 09/30/2010 |
| 20100245812 | DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which... | 09/30/2010 |
| 20100230387 | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged i... | 09/16/2010 |
| 20100227062 | METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method incl... | 09/09/2010 |
| 20100212701 | Substrate Processing Apparatus, Substrate Processing Method, and Drain Cup Cleaning Method A substrate processing apparatus includes a substrate holding member configured to rotate along with a wafer (W) held thereon and a drain cup (51) configured to surround the wafer (W). A cleaning process is performed by rotating the wafer (W) while supplying a pr... | 08/26/2010 |
| 20100203246 | DEPOSITION METHOD AND DEPOSITION APPARATUS FOR NITRIDE FILM A deposition method of depositing a nitride film, including steps of introducing one or more nitrogen supplying gas selected from hydrazine and nitrogen oxides into a catalyst reaction apparatus; enabling a reactive gas generated by contacting the nitrogen supplying gas... | 08/12/2010 |
| 20100172720 | POSITIONAL DEVIATION DETECTION APPARATUS AND PROCESS SYSTEM EMPLOYING THE SAME In a positional deviation detection apparatus provided with a transfer mechanism where plural arm portions are connected pivotably and in series with each other, the transfer mechanism being adapted to hold and transfer an object to be processed with a distal end arm po... | 07/08/2010 |
| 20100166958 | FABRICATION METHOD AND FABRICATION APPARATUS FOR FABRICATING METAL OXIDE THIN FILM Object To provide a technique for efficiently forming a metal oxide thin film made of zinc oxide or the like on a substrate at a low cost, without requiring a large amount of electrical energy. Means of Solution H2 gas and O... | 07/01/2010 |
| 20100132891 | VALVE AND PROCESSING APPARATUS PROVIDED WITH THE SAME A disclosed valve comprises a first valve body including first and second openings that permit gaseous communication between a chamber and an evacuation apparatus; a sealing valve element that moves near/away from the second opening to open/close the second opening; a s... | 06/03/2010 |
| 20100099254 | SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STORAGE MEDIUM AND COMPUTER PROGRAM A semiconductor manufacturing apparatus, when a barrier film and a copper film are formed along a recess in an insulating film by using an alloy layer of copper and addictive metal, e.g., Mn, and copper wiring is embedded therein, reduces Mn in the copper film to suppre... | 04/22/2010 |
| 20100096031 | FLUID CONTROL APPARATUS There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency. A pressure indication device 4 to be replaced with a relatively-higher frequency is coupled to a ... | 04/22/2010 |
| 20100081292 | GAS TREATMENT METHOD AND COMPUTER READABLE STORAGE MEDIUM A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH3 and H2 to the chamber, in which a coating layer deposi... | 04/01/2010 |
| 20100047448 | FILM FORMING APPARATUS AND METHOD A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made... | 02/25/2010 |
| 20100038833 | ANNEALING APPARATUS Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 02/18/2010 | |
| 20100021621 | COATING AND DEVELOPING SYSTEM CONTROL METHOD OF CONTROLLING COATING AND DEVELOPING SYSTEM Techniques can curtail time for which a substrate is held to no purpose and improves the throughput of a coating and developing system. An inspection station through which a substrate processed in a processing station is transferred to a carrier station includes a plura... | 01/28/2010 |
| 20100015815 | PLASMA OXIDIZING METHOD, PLASMA PROCESSING APPARATUS, AND STORAGE MEDIUM A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen i... | 01/21/2010 |
| 20100015359 | FILM DEPOSITION APPARATUS AND METHOD A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which in... | 01/21/2010 |
| 20100003807 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM Provided is a method for performing etching process or film forming process to a substrate W whereupon a prescribed pattern is formed with an opening. The method is provided with a step of mixing a liquid and a gas, at least one of which contains a component that contri... | 01/07/2010 |
| 20100001744 | STANDING WAVE MEASURING UNIT AND STANDING WAVE MEASURING METHOD IN WAVEGUIDE, ELECTROMAGNETIC WAVE UTILIZATION APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD [Problem] To precisely measure a standing wave to be an indication for comprehending a guide wavelength λg or the like in a waveguide. [Means for Solving] A distribution of temperatures is detected in a conductive member forming at least a... | 01/07/2010 |
| 20090263919 | PLASMA OXIDATION PROCESSING METHOD A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen ... | 10/22/2009 |
| 20090260655 | Substrate Cleaning System, Substrate Cleaning Method, Subtrate Cleaning Program, and Program Recording Medium A substrate cleaning system according to the present invention comprises cleaning devices, and a controller for controlling the driving of the cleaning devices in accordance with driving recipes predetermined. The controller prioritizes the cleaning devices, calculates,... | 10/22/2009 |
| 20090259335 | Substrate Processing System When a wafer (W101) to be returned from a second cluster (12) to a first cluster (10) is delivered to a pass area (PA), a vacuum transfer robot (RB1) in the first cluster (10) performs serial transportation in the first cluster (10<... | 10/15/2009 |
| 20090246373 | METHOD OF FORMING METALLIC FILM AND PROGRAM-STORING RECORDING MEDIUM A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base ... | 10/01/2009 |
| 20090218483 | Analyzing Method and Analyzing Apparatus An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the su... | 09/03/2009 |
| 20090206255 | SUBSTRATE INSPECTION DEVICE AND SUBSTRATE INSPECTION METHOD Provided is a substrate inspection apparatus for inspecting defects of a pattern formed on a laminated structure on a substrate. The laminated structure includes a first and a second layer sequentially formed on the substrate, which have different compositions from each... | 08/20/2009 |
