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Assignee: The Ritsumeikan Trust


Location: Kyoto-shi, JP
No. of applications: 3

Application No.Application TitleIssue Date
20120229342ANTENNA DEVICE
An antenna device has a substrate having a first surface and a second surface on the opposite side of the first surface, a first-surface-side conductive layer formed on the first surface of the substrate, a second-surface-side conductive layer formed on the second surfa...
09/13/2012
20120007039CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE
A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed st...
01/12/2012
20100105992Pressure-sensitive conductive yarn and biological information-measuring garment
Object

An object of the present invention is to provide a pressure-sensitive conductive yarn capable of detecting different biological information simultaneously when used as an electrode.

Means for Achieving t...

04/29/2010
 
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