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| Application No. | Application Title | Issue Date |
| 20090134790 | POLYCRYSTALLINE SILICON AS AN ELECTRODE FOR A LIGHT EMITTING DIODE & METHOD OF MAKING THE SAME Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be f... | 05/28/2009 |
| 20070236406 | Three-dimensional H-fractal bandgap materials and antennas A three dimensional (3D) fractal structure with H as the mother element is hereby disclosed. Such a 3D structure can act as selective total microwave reflectors or selective microwave filters in transmission. When excited through current injection, such a 3D fractal str... | 10/11/2007 |
| 20070236312 | Subwavelength waveguide and delay line with fractal cross sections A waveguide structure is described wherein microwaves or radio-frequency waves can be guided in their propagation through channels whose cross-sections contain fractal patterns, with relevant dimensions much smaller than the wavelengths of the guided waves. A finite sec... | 10/11/2007 |
| 20070181947 | Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type devi... | 08/09/2007 |
| 20060250079 | INTERMEDIATE LAYERS TREATED BY CF4-PLASMA FOR STACKED ORGANIC LIGHT-EMITTING DEVICES There is disclosed a structure for a stacked organic light emitting device in which a plurality of emissive units are disposed between the anode and the cathode. The emissive units comprise at least a hole-transport layer and an electron-transport layer. An intermediate... | 11/09/2006 |
| 20060148217 | Method of annealing polycrystalline silicon using solid-state laser and devices built thereon The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said l... | 07/06/2006 |
| 20060017495 | Symmetrically matched voltage mirror and applications therefor A voltage mirror circuit using a symmetrically matched transistor structure is provided. The circuit includes an input reference voltage node on a first side of said circuit and an output mirror voltage node on a second side of said circuit, and a plurality of matched t... | 01/26/2006 |
