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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Application No. | Application Title | Issue Date |
| 20130130482 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlo... | 05/23/2013 |
| 20130129291 | MULTI-MODE OPTICAL FIBER The present invention relates to a multi-mode optical fiber having a structure which can be produced with good stability with a communication bandwidth broader than that in the conventional structures, and in which both GeO2 and chlorine are added to a core t... | 05/23/2013 |
| 20130129288 | OPTICAL CABLE An optical cable comprises an optical fiber ribbon, a tension member and a sheath. The optical fiber ribbon is constructed by integrating a plurality of optical fibers arranged in parallel. The sheath is provided so as to surround the optical fiber ribbon. The sheath is... | 05/23/2013 |
| 20130128923 | DEVICE FOR RAISING TEMPERATURE AND METHOD FOR TESTING AT ELEVATED TEMPERATURE An external DC power supply 2 feeds a power supply voltage to a drain electrode of a MOSFET 10 constituted by silicon carbide (SiC), and a variable bias voltage generated from thus fed power supply voltage is applied to a gate electrode 13, so as to... | 05/23/2013 |
| 20130126904 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having... | 05/23/2013 |
| 20130126866 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF A semiconductor device in one embodiment includes a wiring board having a wiring pattern; an N semiconductor elements(where N denotes a natural number equal to or greater than 2) mounted on a wiring board; and a current detection parts for detecting a current flowing th... | 05/23/2013 |
| 20130120890 | TRANSISTOR PROTECTION CIRCUIT Provided is a transistor protection circuit capable of appropriately protecting a transistor even when a switching frequency is high. A transistor protection circuit according to an embodiment of the present invention is a transistor protection circuit for protecting a ... | 05/16/2013 |
| 20130119407 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, in the substrate, a trench opened on one main surface side of the substrate; and forming an oxide film in a region including a surface of the... | 05/16/2013 |
| 20130119406 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM A silicon carbide substrate includes a base layer made of silicon carbide, silicon carbide layers made of single-crystal silicon carbide and arranged side by side on the base layer when viewed in plan view, and a filling portion made of silicon carbide and filling a gap... | 05/16/2013 |
| 20130114319 | REACTOR A reactor having a good heat dissipation effect is provided. The reactor includes one coil formed by winding a wire, a magnetic core arranged inside and outside the coil and forming a closed magnetic circuit, and a case for housing an assembly of the coil and the magnet... | 05/09/2013 |
| 20130112996 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate having a main surface, and a silicon carbide layer. The silicon carbide layer i... | 05/09/2013 |
| 20130112994 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MODULE The semiconductor module includes a base and at least one circuit substrate. The at least one circuit substrate has a supporting substrate and a semiconductor element supported by the supporting substrate. The base and/or the supporting substrate has a structure for fit... | 05/09/2013 |
| 20130112993 | SEMICONDUCTOR DEVICE AND WIRING SUBSTRATE A semiconductor device according to one embodiment of the present invention includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate and having a conductive property, and a semiconductor element mounted on the wiring la... | 05/09/2013 |
| 20130109200 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE There can be obtained a method for manufacturing a semiconductor device in which adherence of particles can be suppressed and printing onto a substrate can be done. The method for manufacturing a semiconductor device includes the steps of: preparing a substrate formed o... | 05/02/2013 |
| 20130109156 | Indium Phosphide Substrate Manufacturing Method and Epitaxial Wafer Manufacturing Method The present invention affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and epitaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration ... | 05/02/2013 |
| 20130107580 | REACTOR, AND COIL COMPONENT Provided are a coil component capable of contributing to improving productivity of a reactor, and a reactor exhibiting good productivity. A reactor 1A includes one coil 2 formed by spirally winding a wire 2w, and a magnetic core 3, which is d... | 05/02/2013 |
| 20130105762 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE A nitride semiconductor light-emitting device includes a support base and a diode structure. The support base has a primary surface of a hexagonal nitride semiconductor. The diode structure is provided on the primary surface of the support base. The diode structure incl... | 05/02/2013 |
| 20130102141 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A method for manufacturing a MOSFET includes the steps of preparing a substrate (10) composed of silicon carbide, forming a gate oxide film (20) in contact with the substrate (10), and introducing nitrogen atoms in a region including an interface be... | 04/25/2013 |
| 20130100320 | IMAGING APPARATUS AND IMAGING METHOD An imaging apparatus includes a control unit, an imaging device, a memory, and a correction unit. The memory stores information for specifying a pixel as a defect pixel among the arrayed pixels if a variation in image data of the pixel in a period is a predetermined val... | 04/25/2013 |
| 20130099251 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination regio... | 04/25/2013 |
| 20130099203 | PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an In... | 04/25/2013 |
| 20130095294 | SILICON CARBIDE INGOT AND SILICON CARBIDE SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME A silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of... | 04/18/2013 |
| 20130094819 | OPTICAL TRANSMISSION LINE There is provided an optical transmission line that includes a bend insensitive fiber (BIF) defined by ITU-T Recommendation G.657 and that reduces the influence of MPI. An optical transmission line 1 includes a first optical fiber 11, a second optical fibe... | 04/18/2013 |
| 20130094818 | CONNECTOR ASSEMBLY A connector assembly capable of efficiently dissipating heat is provided. The connector assembly includes: an optical cable; and a connector module, and the optical cable includes an optical fiber core wire, an outer cover provided around the optical fiber core wire, an... | 04/18/2013 |
| 20130094528 | METHOD TO CONTROL EMISSION WAVELENGTH OF TUNABLE LASER DIODE A method to control the emission wavelength of a tunable laser diode (LD) is disclosed. The method measures the first derivative of the wavelength against the first stimulus, typically a current injected in the SG-DFB region, and the second derivative of the wavelength ... | 04/18/2013 |
| 20130093071 | OPTICAL MODULE WITH A LENS ENCAPSULATED WITHIN SEALANT AND METHOD FOR MANUFACTURING THE SAME A method to manufacture an optical module is disclosed, wherein the optical module has an optically active device on a lead frame and a lens co-molded with the active device and the lead frame by a transparent resin as positioning the lens with respect to the lead frame... | 04/18/2013 |
| 20130089936 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A plurality of SiC semiconductor chips are mounted on a mounting substrate (S1), and a voltage is applied to the SiC semiconductor chips on the mounting substrate (S2). In the state in which the voltage is applied, thermography, infrared microscope, or ano... | 04/11/2013 |
| 20130089296 | MULTI-MODE OPTICAL FIBER The present invention relates to a multi-mode optical fiber having a structure enabling stable production and broadening of communication bandwidth as compared with the conventional structures. The multi-mode optical fiber has a core with a diameter 2a tha... | 04/11/2013 |
| 20130088318 | REACTOR AND METHOD FOR PRODUCING SAME A reactor 1α includes one coil 2, a magnetic core 3 to which the coil 2 is arranged, and a case 4 containing an assembly 10 of the coil 2 and the magnetic core 3. The magnetic core 3 includes an inner core ... | 04/11/2013 |
| 20130087604 | ROTARY TOOL A friction stir welding tool is provided which allows for excellent wear resistance and high joining strength even in a process of joining difficult-joining materials. A friction stir welding tool of the present invention is used for a friction stir welding process and ... | 04/11/2013 |
| 20130084048 | MULTI-MODE OPTICAL FIBER The present invention relates to a multi-mode optical fiber having a structure to reduce the numerical aperture at the emission end of the multi-mode optical fiber having a length for which practical use is assumed. The multi-mode optical fiber comprises a core portion,... | 04/04/2013 |
| 20130082776 | AMPLIFIER FOR RECEIVING OPTICAL SIGNALS COMPLEMENTARY TO EACH OTHER An amplifier for detecting photocurrents complementary to each other is disclosed. The optical receiver includes two trans-impedance amplifiers (TIAs) each having the single phase arrangement, a level detector to detect an average level between respective outputs of the... | 04/04/2013 |
| 20130082278 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME A nitride semiconductor device and a method to produce the same are disclosed. The method includes steps of sequentially growing a channel layer and a first layer with bandgap energy Eg greater than that of channel layer; forming a gate replica on the first layer; selec... | 04/04/2013 |
| 20130081997 | SEPARATION MEMBRANE FOR SEAWATER DESALINATION PRETREATMENT, SEAWATER DESALINATION PRETREATMENT DEVICE, SEAWATER DESALINATION APPARATUS, AND SEAWATER DESALINATION METHOD The separation membrane for seawater desalination pretreatment is a separation membrane for seawater desalination pretreatment used in pretreatment for seawater desalination with a reverse osmosis membrane, wherein a standard flux A is 2 m/d or more, which is defined as... | 04/04/2013 |
| 20130078771 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE A collector layer having p type is formed on a silicon carbide substrate having n type. A drift layer having n type is formed on a top surface side of the collector layer. A body region provided on the drift layer and having p type, and an emitter region provided on the... | 03/28/2013 |
| 20130077925 | OPTICAL FIBER An optical fiber includes a core section and a cladding section. A k value expressed by k=4Aeff/(πMFD2) is 1.08 or larger, Aeff being an effective area and MFD being a mode field diameter, at a wavelength of 1550 nm, a chromatic dispersion is in a range from... | 03/28/2013 |
| 20130075759 | SILICON CARBIDE SEMICONDUCTOR DEVICE A first layer has n type conductivity. A second layer is epitaxially formed on the first layer and having p type conductivity. A third layer is on the second layer and having n type conductivity. ND is defined to represent a concentration of a donor type impurity. NA is... | 03/28/2013 |
| 20130075758 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A MOSFET includes a semiconductor substrate having a trench formed in a main surface, a gate oxide film, a gate electrode, and a source interconnection. A semiconductor substrate includes an n-type drift layer and a p-type body layer. The trench is formed to penetrate t... | 03/28/2013 |
| 20130074551 | METHOD OF MAKING MULTI-CORE OPTICAL FIBER AND METHOD OF MAKING MULTI-CORE OPTICAL FIBER CONNECTOR The present invention, even in the case where the size of a preform itself is increased, enables production of a multi-core optical fiber in which cores are arranged with high accuracy. A plurality of core members each being rod-like are fixed by an array fixing member ... | 03/28/2013 |
| 20130071643 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe... | 03/21/2013 |
