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| Application No. | Application Title | Issue Date |
| 20110279054 | Power Light Emitting Diode and Method with Current Density Operation A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll... | 11/17/2011 |
| 20120000415 | Large Area Nitride Crystal and Method for Making It Techniques for processing materials in supercritical fluids include processing in a capsule disposed within a high-pressure apparatus enclosure. The invention is useful for growing crystals of: GaN; AN; InN; and their alloys, namely: InGaN; AlGaN; and AlInGaN; for manuf... | 01/05/2012 |
| 20110315999 | Gallium and Nitrogen Containing Triangular or Diamond-shaped Configuration for Optical Devices A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.... | 12/29/2011 |
| 20110309373 | Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe... | 12/22/2011 |
| 20110247556 | Tapered Horizontal Growth Chamber A system and techniques for performing deposition having a tapered horizontal growth chamber which includes a susceptor and a tapered channel flow block. A tapered chamber is formed between the susceptor and the tapered channel flow block. Gaseous species introduced are... | 10/13/2011 |
| 20110220912 | Semi-insulating Group III Metal Nitride and Method of Manufacture A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material du... | 09/15/2011 |
| 20110186887 | Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials An optical device includes an LED overlying a portion of a surface region of a substrate member and a wavelength conversion material within a vicinity of the LED. The device also includes a wavelength selective surface configured to block direct emission of the LED and ... | 08/04/2011 |
| 20110183498 | High Pressure Apparatus and Method for Nitride Crystal Growth An improved high pressure apparatus and methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, and at least one ceramic ring contained by a metal sleeve. The apparatus is capable of accessing pressures and temperatures of 0... | 07/28/2011 |
| 20110182056 | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials Techniques are described for transmitting electromagnetic radiation from LED devices fabricated on bulk semipolar or nonpolar materials with use of phosphors to emit light in a reflection mode.... | 07/28/2011 |
| 20110140150 | System and Method for LED Packaging System and method for LED packaging. The present invention is directed to optical devices. More specifically, embodiments of the presentation provide LED packaging having one or more reflector surfaces. In certain embodiments, the present invention provides LED packages... | 06/16/2011 |
| 20110100291 | PLANT AND METHOD FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES A method of operating a high pressure system for growth of gallium nitride containing materials. The method comprises providing a high pressure apparatus comprising a growth region and feedstock region. The high pressure reactor comprises a high pressure enclosure and i... | 05/05/2011 |
| 20110056429 | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphi... | 03/10/2011 |
| 20100302464 | Laser Based Display Method and System The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the ... | 12/02/2010 |
| 20100295088 | TEXTURED-SURFACE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm... | 11/25/2010 |
| 20100219505 | NITRIDE CRYSTAL WITH REMOVABLE SURFACE LAYER AND METHODS OF MANUFACTURE A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantia... | 09/02/2010 |
| 20100189981 | LARGE-AREA BULK GALLIUM NITRIDE WAFER AND METHOD OF MANUFACTURE The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The see... | 07/29/2010 |
| 20100151194 | POLYCRYSTALLINE GROUP III METAL NITRIDE WITH GETTER AND METHOD OF MAKING A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalli... | 06/17/2010 |
| 20100147210 | HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH An improved high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a release sleeve, a heater, at least one ceramic segment or ring but can be multiple segments or rings, optio... | 06/17/2010 |
| 20100075175 | LARGE-AREA SEED FOR AMMONOTHERMAL GROWTH OF BULK GALLIUM NITRIDE AND METHOD OF MANUFACTURE A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The s... | 03/25/2010 |
| 20100031875 | PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonotherm... | 02/11/2010 |
| 20100031874 | PROCESS AND APPARATUS FOR GROWING A CRYSTALLINE GALLIUM-CONTAINING NITRIDE USING AN AZIDE MINERALIZER An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere d... | 02/11/2010 |
| 20100031873 | BASKET PROCESS AND APPARATUS FOR CRYSTALLINE GALLIUM-CONTAINING NITRIDE An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere d... | 02/11/2010 |
| 20100031872 | APPARATUS AND METHOD FOR SEED CRYSTAL UTILIZATION IN LARGE-SCALE MANUFACTURING OF GALLIUM NITRIDE An apparatus and associated method for large-scale manufacturing of gallium nitride. The apparatus comprises a large diameter autoclave or internally-heated high pressure vessel, a seed rack, and a raw material basket. Methods include effective means for utilization of ... | 02/11/2010 |
| 20100025656 | WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a s... | 02/04/2010 |
| 20100006873 | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar G... | 01/14/2010 |
| 20100003492 | HIGH QUALITY LARGE AREA BULK NON-POLAR OR SEMIPOLAR GALLIUM BASED SUBSTRATES AND METHODS A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method for making. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a ... | 01/07/2010 |
| 20100001300 | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs A packaged light emitting device. The device has a substrate member comprising a surface region. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region according to a speci... | 01/07/2010 |
| 20090320745 | HEATER DEVICE AND METHOD FOR HIGH PRESSURE PROCESSING OF CRYSTALLINE MATERIALS An improved heater for processing materials or growing crystals in supercritical fluids is provided. In a specific embodiment, the heater is scalable up to very large volumes and is cost effective. In conjunction with suitable high pressure apparatus, the heater is capa... | 12/31/2009 |
| 20090320744 | HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks ... | 12/31/2009 |
| 20090309127 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than abou... | 12/17/2009 |
| 20090309110 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE FOR MULTI-COLORED DEVICES A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used.... | 12/17/2009 |
