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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Application No. | Application Title | Issue Date |
| 20120127629 | DOPED ZrO2 CAPACITOR MATERIALS AND STRUCTURES A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals... | 05/24/2012 |
| 20120108044 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration ... | 05/03/2012 |
| 20120108038 | AMORPHOUS GE/TE DEPOSITION PROCESS Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous film... | 05/03/2012 |
| 20120051994 | APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product... | 03/01/2012 |
| 20120042898 | COMPOSITIONS AND METHOD FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The sem... | 02/23/2012 |
| 20120028870 | NON-AMINE POST-CMP COMPOSITION AND METHOD OF USE A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-contain... | 02/02/2012 |
| 20110277846 | RECTANGULAR PARALLELEPIPED FLUID STORAGE AND DISPENSING VESSEL A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubbe... | 11/17/2011 |
| 20110275164 | COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves a... | 11/10/2011 |
| 20110263100 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured u... | 10/27/2011 |
| 20110260132 | HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representativ... | 10/27/2011 |
| 20110259366 | ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growt... | 10/27/2011 |
| 20120015857 | LITHOGRAPHIC TOOL IN SITU CLEAN FORMULATIONS Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.... | 01/19/2012 |
| 20110303558 | GAS STORAGE AND DISPENSING SYSTEM WITH MONOLITHIC CARBON ADSORBENT A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at lea... | 12/15/2011 |
| 20110284576 | FLUID STORAGE AND DISPENSING VESSELS HAVING COLORIMETRICALLY VERIFIABLE LEAK-TIGHTNESS AND METHOD OF MAKING SAME A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character, tha... | 11/24/2011 |
| 20110252883 | FLUID STORAGE AND DISPENSING SYSTEM INCLUDING DYNAMIC FLUID MONITORING OF FLUID STORAGE AND DISPENSING VESSEL A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fluid ... | 10/20/2011 |
| 20110232367 | FLUID STORAGE AND DISPENSING SYSTEM INCLUDING DYNAMIC FLUID MONITORING OF FLUID STORAGE AND DISPENSING VESSEL A monitoring system for monitoring fluid in a fluid supply vessel during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors for monitoring a characteristic of the fluid supply vessel or the fluid ... | 09/29/2011 |
| 20110226874 | FLUID STORAGE AND DISPENSING SYSTEMS, AND FLUID SUPPLY PROCESSES COMPRISING SAME Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and inter... | 09/22/2011 |
| 20110220518 | NANOPOROUS ARTICLES AND METHODS OF MAKING SAME An adsorbent having porosity expanded by contact with a first agent effecting such expansion and a pressurized second agent effecting transport of the first agent into the porosity, wherein the adsorbent subsequent to removal of the first and second agents retains expan... | 09/15/2011 |
| 20110195188 | CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper la... | 08/11/2011 |
| 20110186086 | OXIDIZING AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one... | 08/04/2011 |
| 20110183528 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N 07/28/2011 | |
| 20110180905 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening g... | 07/28/2011 |
| 20110171382 | SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one o... | 07/14/2011 |
| 20110165762 | MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise ... | 07/07/2011 |
| 20110159671 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration ... | 06/30/2011 |
| 20110140181 | Removal of Masking Material Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cer... | 06/16/2011 |
| 20110136343 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise ... | 06/09/2011 |
| 20110117751 | NON-SELECTIVE OXIDE ETCH WET CLEAN COMPOSITION AND METHOD OF USE Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.... | 05/19/2011 |
| 20110111556 | ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for... | 05/12/2011 |
| 20110097882 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration ... | 04/28/2011 |
| 20110097478 | SCALABLE LEAD ZIRCONIUM TITANATE (PZT) THIN FILM MATERIAL AND DEPOSITION METHOD, AND FERROELECTRIC MEMORY DEVICE STRUCTURES COMPRISING SUCH THIN FILM MATERIAL A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, puls... | 04/28/2011 |
| 20110065268 | BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-contai... | 03/17/2011 |
| 20110060165 | METAL AMINOTROPONIMINATES, BIS-OXAZOLINATES AND GUANIDINATES Metal aminotroponiminates, metal bis-oxazolinates and metal guanidinates are described, as well as ligand precursors of such compounds, and mixed ligand barium and strontium complexes suitable for chemical vapor deposition, atomic layer deposition, and rapid vapor depos... | 03/10/2011 |
| 20110052482 | METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed... | 03/03/2011 |
| 20110048063 | COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member.... | 03/03/2011 |
| 20110039747 | COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizin... | 02/17/2011 |
| 20110021011 | CARBON MATERIALS FOR CARBON IMPLANTATION A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the... | 01/27/2011 |
| 20110006269 | SOLVENT-FREE SYNTHESIS OF SOLUBLE NANOCRYSTALS Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents.... | 01/13/2011 |
| 20110001107 | HOLLOW GST STRUCTURE WITH DIELECTRIC FILL A memory cell structure, including a substrate having a via therein bound at first and second ends thereof by electrodes. The via is coated on side surfaces thereof with GST material defining a core that is hollow or at least partially filled with material, e.g., german... | 01/06/2011 |
| 20100317150 | ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured u... | 12/16/2010 |
