US Classes257/77, Diamond or silicon carbide257/E29.084Including two or more of elements from fourth group of Periodic System (EPO)
- 2009-109281 JP 04/28/2009
Issued Patent Number:8395184
A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an Alx
) layer and a cubic silicon carbide single crystal layer. The apparatus also includes a substrate on which a metal layer is formed. The multilayer structure is bonded to a surface of the metal layer with the Alx
) in direct contact with the metal layer.