US Patent Application 20100068894 - COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS
InventorsAssigneeUS Classes438/758, COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE427/248.1, COATING BY VAPOR, GAS, OR SMOKE427/255.29, Inorganic oxygen, sulfur, selenium, or tellurium (i.e., chalcogen) containing coating (e.g., phosphosilicate, silicon oxynitride, etc.)257/E21.211Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (EPO)Attorney, Agent or FirmInternational ClassesH01L 21/30C23C 16/44 Issued Patent Number:7781605Abstract textSilicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures. |
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