US Patent Application 20100067308 - Sub Volt Flash Memory System
InventorsAssigneeUS Classes365/185.21, Sensing circuitry (e.g., current mirror)330/253, Having field effect transistor365/208, Semiconductors365/185.23, Drive circuitry (e.g., word line driver)365/185.18Particular biasingAttorney, Agent or FirmInternational ClassesG11C 16/28H03F 3/45 G11C 7/06 G11C 16/06 G11C 7/12 Issued Patent Number:7990773Abstract textVarious circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system. |
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