InventorsAssigneeUS Classes250/492.3, Ion or electron beam irradiation137/488, Fluid pressure type137/505, With opening bias (e.g., pressure regulator)250/492.21Ion bombardmentAttorney, Agent or FirmInternational ClassesG21K 5/00F16K 31/12 Issued Patent Number:7798168Abstract textApparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes. |
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