Abstract text

A temperature-controlled hot edge ring assembly adapted to surround a semiconductor substrate supported in a plasma reaction chamber is provided. A substrate support with an annular support surface surrounds a substrate support surface. A radio-frequency (RF) coupling ring overlies the annular support surface. A lower gasket is between the annular support surface and the RF coupling ring. The lower gasket is thermally and electrically conductive. A hot edge ring overlies the RF coupling ring. The substrate support is adapted to support a substrate such that an outer edge of the substrate overhangs the hot edge ring. An upper thermally conductive medium is between the hot edge ring and the RF coupling ring. The hot edge ring, RF coupling ring and annular support surface can be mechanically clamped. A heating element can be embedded in the RF coupling ring.