US Classes438/694, Combined with coating step438/705, Altering etchability of substrate region by compositional or crystalline modification438/712, Reactive ion beam etching (i.e., RIBE)257/E21.218, Plasma etching; reactive-ion etching (EPO)257/E21.248, By ion implantation (EPO)257/E21.249Etching insulating layer by chemical or physical means (EPO)
Attorney, Agent or Firm
International ClassesH01L 21/311
Issued Patent Number:8124534
A process including forming a silicon layer over a semiconductor wafer having features thereon and then selectively ion implanting in the silicon layer to form ion implanted regions. The step of selectively ion implanting is repeated as many times as necessary to obtain a predetermined number and density of features. Thereafter, the silicon layer is etched to form openings in the silicon layer that were formerly occupied by the ion implanted regions. The opened areas in the silicon layer form a mask for further processing of the semiconductor wafer.