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US Patent Application 20090325367 - METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR

Application 20090325367 Filed on May 29, 2009. Published on December 31, 2009

Inventors

Assignee

US Classes

438/507, Fluid growth from gaseous state combined with subsequent diverse operation118/725, Substrate heater118/719, Multizone chamber118/729, Moving work support427/248.1, COATING BY VAPOR, GAS, OR SMOKE257/E21.09Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (EPO)

Attorney, Agent or Firm

International Classes

H01L 21/20
C23C 16/00
C23C 16/46


Abstract text


Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

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