US Patent Application 20090316484 - SEMICONDUCTOR MEMORY DEVICE, METHOD OF DRIVING THE SAME AND METHOD OF MANUFACTURING THE SAME
InventorsUS Classes365/185.15, Weak inversion injection257/324, Multiple insulator layers (e.g., MNOS structure)438/287, Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound257/E29.309, With charge trapping gate insulator (e.g., MNOS-memory transistors) (EPO)257/E21.423With charge trapping gate insulator, e.g., MNOS transistor (EPO)Attorney, Agent or FirmForeign Documents
International ClassesG11C 16/04H01L 29/792 H01L 21/336 Issued Patent Number:7821823Abstract textDisclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side. |
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