Abstract text

The present invention pertains generally to a high-index film deposited on a substrate, the film comprising a layer of a prescribed seed material and an overlaying layer of titanium dioxide (TiO₂). The seed material has a prescribed, uniform inter-atomic spacing adapted to cause the overlaying TiO₂ to have a high-index phase. The present invention also pertains generally to a method for forming a high-index film, comprising the steps of first forming a layer of a seed material having the prescribed, uniform inter-atomic spacing, and then forming a layer of TiO₂ atop the seed material, such that the TiO₂ has the high-index phase.