US Patent Application 20090298193 - ATOMIC EMISSION SPECTROSCOPY ON A CHIP
InventorsAssigneeUS Classes436/172, With fluorescence or luminescence204/164, Electrostatic field or electrical discharge422/82.05, Measuring optical property by using ultraviolet, infrared, or visible light257/429, Charged or elementary particles257/431, Light257/E31.001SEMICONDUCTOR DEVICES RESPONSIVE OR SENSITIVE TO ELECTROMAGNETIC RADIATION (E.G., INFRARED RADIATION, ADAPTED FOR CONVERSION OF RADIATION INTO ELECTRICAL ENERGY OR FOR CONTROL OF ELECTRICAL ENERGY BY SUCH RADIATION PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF) (EPO)Attorney, Agent or FirmInternational ClassesG01N 21/76B01J 19/00 G01N 21/75 H01L 31/00 Abstract textA method of inducing explosive atomization of materials is provided using a metal-oxide-semiconductor (MOS)-based structure under electrical excitation. Explosive atomization of the gate electrode and surrounding dielectric materials creates a microplasma that is substantially confined with the device at the metal/dielectric interface. The device can generate a microplasma in either the accumulation or inversion regime. The high degree of confinement of the microplasma allows chip-scale implementation of atomic emission spectroscopy and detection using a minimal amount of analyte. |
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