InventorsAssigneeUS Classes313/504, Organic phosphor438/29Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)Attorney, Agent or FirmInternational Classes H01L 51/52 H01L 51/56 Issued Patent Number:7923911
Abstract textMetal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production. | 
