InventorsAssigneeUS Classes438/23, Having diverse electrical device257/E21.04Device having at least one potential-jump barrier or surface barrier, e.g., PN junction, depletion layer, carrier concentration layer (EPO)Attorney, Agent or FirmForeign DocumentsInternational Class H01L 21/04 Issued Patent Number:7575966
Abstract textA method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate. | 
