Abstract text

The present invention has an object to provide a method for forming an oxide dielectric layer, which dielectric layer is formed by applying the sol-gel method, and is hardly damaged by an etching solution and excellent in dielectric characteristics such as a large electric capacitance. To achieve the object, the forming method of an oxide dielectric layer by applying a sol-gel method characterized by being provided with the following processes (a) to (c) is employed. Process (a): A solution preparing process of preparing a sol-gel solution for manufacturing an aiming oxide dielectric layer. Process (b): A coating process wherein stages of the sol-gel solution coating on the surface of a metal substrate followed by drying in an oxygen-containing atmosphere followed by pyrolysis in an oxygen-containing atmosphere sequentially is made one unit step; the one unit step is repeated twice or more times; and a pre-baking stage at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like is provided optionally between the one unit step and the next one unit step to control the film thickness. Process (c): A baking process of finally subjecting the coated metal substrate to a baking process at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like to finish the dielectric layer.